Abstract
This paper describes a study of the atomic structure and electronic effects of grain boundaries in polycrystalline photovoltaic materials such as Si, CdTe, CuInSe2, and CuGaSe2.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2008 |
| Event | 33rd IEEE Photovoltaic Specialists Conference - San Diego, California Duration: 11 May 2008 → 16 May 2008 |
Conference
| Conference | 33rd IEEE Photovoltaic Specialists Conference |
|---|---|
| City | San Diego, California |
| Period | 11/05/08 → 16/05/08 |
NREL Publication Number
- NREL/CP-520-42510
Keywords
- atomic structure
- electronic properties
- grain boundary (GBS)
- impurity
- large-area
- polycrystalline
- PV
- transmission electron microscopy (TEM)