Grain Enhancement of Thin Silicon Layers Using Optical Processing

B. L. Sopori, Jeff Alleman, W. Chen, T. Y. Tan, N. M. Ravindra

Research output: Contribution to conferencePaperpeer-review

5 Scopus Citations


We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

Original languageAmerican English
Number of pages6
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1 Apr 19974 Apr 1997


ConferenceProceedings of the 1997 MRS Spring Meeting
CitySan Francisco, CA, USA

Bibliographical note

Work performed by National Renewable Energy Laboratory, Golden, Colorado; Department of Mechanical Engineering and Materials Science, Duke University, Durham, South Carolina; and New Jersey Institute of Technology, Newear, New Jersey

NREL Publication Number

  • NREL/CP-520-22149


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