Grain Enhancement of Thin Silicon Layers Using Optical Processing

B. L. Sopori; Jeff Alleman; W. Chen; T. Y. Tan; N. M. Ravindra

doi:10.1557/proc-470-419

Grain Enhancement of Thin Silicon Layers Using Optical Processing

B. L. Sopori, Jeff Alleman, W. Chen, T. Y. Tan, N. M. Ravindra

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

Original language	American English
Pages	419-424
Number of pages	6
DOIs	https://doi.org/10.1557/proc-470-419
State	Published - 1997
Event	Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA Duration: 1 Apr 1997 → 4 Apr 1997

Conference

Conference	Proceedings of the 1997 MRS Spring Meeting
City	San Francisco, CA, USA
Period	1/04/97 → 4/04/97

Bibliographical note

Work performed by National Renewable Energy Laboratory, Golden, Colorado; Department of Mechanical Engineering and Materials Science, Duke University, Durham, South Carolina; and New Jersey Institute of Technology, Newear, New Jersey

NREL Publication Number

NREL/CP-520-22149

Access to Document

10.1557/proc-470-419

Cite this

@conference{922141370bc14c089c8fe28adb5dc7a2,

title = "Grain Enhancement of Thin Silicon Layers Using Optical Processing",

abstract = "We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.",

author = "Sopori, {B. L.} and Jeff Alleman and W. Chen and Tan, {T. Y.} and Ravindra, {N. M.}",

note = "Work performed by National Renewable Energy Laboratory, Golden, Colorado; Department of Mechanical Engineering and Materials Science, Duke University, Durham, South Carolina; and New Jersey Institute of Technology, Newear, New Jersey; Proceedings of the 1997 MRS Spring Meeting ; Conference date: 01-04-1997 Through 04-04-1997",

year = "1997",

doi = "10.1557/proc-470-419",

language = "American English",

pages = "419--424",

}

TY - CONF

T1 - Grain Enhancement of Thin Silicon Layers Using Optical Processing

AU - Sopori, B. L.

AU - Alleman, Jeff

AU - Chen, W.

AU - Tan, T. Y.

AU - Ravindra, N. M.

N1 - Work performed by National Renewable Energy Laboratory, Golden, Colorado; Department of Mechanical Engineering and Materials Science, Duke University, Durham, South Carolina; and New Jersey Institute of Technology, Newear, New Jersey

PY - 1997

Y1 - 1997

N2 - We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

AB - We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

UR - http://www.scopus.com/inward/record.url?scp=0031354051&partnerID=8YFLogxK

U2 - 10.1557/proc-470-419

DO - 10.1557/proc-470-419

M3 - Paper

AN - SCOPUS:0031354051

SP - 419

EP - 424

T2 - Proceedings of the 1997 MRS Spring Meeting

Y2 - 1 April 1997 through 4 April 1997

ER -

Grain Enhancement of Thin Silicon Layers Using Optical Processing

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this