Abstract
Cryogenic focused ion beam (Cryo-FIB) milling at near-grazing angles is employed to fabricate cross-sections on thin Cu(In,Ga)Se2 with >8x expansion in thickness. Kelvin probe force microscopy (KPFM) on sloped cross sections showed reduction in grain boundaries potential deeper into the film. Cryo Fib-KPFM enabled the first determination of the electronic structure of the Mo/CIGSe back contact, where a sub 100 nm thick MoSey assists hole extraction due to 45 meV higher work function. This demonstrates that CryoFIB-KPFM combination can reveal new targets of opportunity for improvement in thin-films photovoltaics such as high-work-function contacts to facilitate hole extraction through the back interface of CIGS.
Original language | American English |
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Pages (from-to) | 14994-14999 |
Number of pages | 6 |
Journal | ACS Applied Materials and Interfaces |
Volume | 8 |
Issue number | 24 |
DOIs | |
State | Published - 2016 |
NREL Publication Number
- NREL/JA-5K00-66733
Keywords
- back contacts
- CIGSe
- Cryo-FIB
- KPFM
- thin-film photovoltaics