Group-V Dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime

Mahisha Amarasinghe; Eric Colegrove; David Albin; Santosh Swain; Joel Duenow; Xin Zheng; Andrew Ferguson; Kelvin Lynn; Wyatt K. Metzger

doi:10.1109/PVSC40753.2019.8981177

Group-V Dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime

Mahisha Amarasinghe, Eric Colegrove, David Albin, Santosh Swain, Joel Duenow, Xin Zheng, Andrew Ferguson, Kelvin Lynn, Wyatt K. Metzger

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

CdTe-based photovoltaic device performance can be improved by increasing both hole density and carrier lifetime simultaneously. In this work, we discuss sources and thin film processes to achieve incorporation and high hole density in conjunction with lifetime using group-V dopants.

Original language	American English
Pages	25-27
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC40753.2019.8981177 https://doi.org/10.1109/PVSC40753.2019.8981177
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5K00-73150

Keywords

cadmium compounds
carrier lifetime
hole density
II-VI semiconductors
selenium compounds
semiconductor thin films
solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Amarasinghe, M., Colegrove, E., Albin, D., Swain, S., Duenow, J., Zheng, X., Ferguson, A., Lynn, K., & Metzger, W. K. (2019). Group-V Dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime. 25-27. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8981177, https://doi.org/10.1109/PVSC40753.2019.8981177

@conference{07f121808dcd413b9b2922f8a1f24682,

title = "Group-V Dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime",

abstract = "CdTe-based photovoltaic device performance can be improved by increasing both hole density and carrier lifetime simultaneously. In this work, we discuss sources and thin film processes to achieve incorporation and high hole density in conjunction with lifetime using group-V dopants.",

keywords = "cadmium compounds, carrier lifetime, hole density, II-VI semiconductors, selenium compounds, semiconductor thin films, solar cells",

author = "Mahisha Amarasinghe and Eric Colegrove and David Albin and Santosh Swain and Joel Duenow and Xin Zheng and Andrew Ferguson and Kelvin Lynn and Metzger, {Wyatt K.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8981177",

language = "American English",

pages = "25--27",

}

Amarasinghe, M, Colegrove, E, Albin, D, Swain, S, Duenow, J, Zheng, X, Ferguson, A, Lynn, K & Metzger, WK 2019, 'Group-V Dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 25-27. https://doi.org/10.1109/PVSC40753.2019.8981177, https://doi.org/10.1109/PVSC40753.2019.8981177

TY - CONF

T1 - Group-V Dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime

AU - Amarasinghe, Mahisha

AU - Colegrove, Eric

AU - Albin, David

AU - Swain, Santosh

AU - Duenow, Joel

AU - Zheng, Xin

AU - Ferguson, Andrew

AU - Lynn, Kelvin

AU - Metzger, Wyatt K.

PY - 2019/6

Y1 - 2019/6

N2 - CdTe-based photovoltaic device performance can be improved by increasing both hole density and carrier lifetime simultaneously. In this work, we discuss sources and thin film processes to achieve incorporation and high hole density in conjunction with lifetime using group-V dopants.

AB - CdTe-based photovoltaic device performance can be improved by increasing both hole density and carrier lifetime simultaneously. In this work, we discuss sources and thin film processes to achieve incorporation and high hole density in conjunction with lifetime using group-V dopants.

KW - cadmium compounds

KW - carrier lifetime

KW - hole density

KW - II-VI semiconductors

KW - selenium compounds

KW - semiconductor thin films

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=85081567842&partnerID=8YFLogxK

U2 - 10.1109/PVSC40753.2019.8981177

DO - 10.1109/PVSC40753.2019.8981177

M3 - Paper

AN - SCOPUS:85081567842

SP - 25

EP - 27

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Group-V Dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

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