Group-V Dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime

Mahisha Amarasinghe, Eric Colegrove, David Albin, Santosh Swain, Joel Duenow, Xin Zheng, Andrew Ferguson, Kelvin Lynn, Wyatt K. Metzger

Research output: Contribution to conferencePaperpeer-review

Abstract

CdTe-based photovoltaic device performance can be improved by increasing both hole density and carrier lifetime simultaneously. In this work, we discuss sources and thin film processes to achieve incorporation and high hole density in conjunction with lifetime using group-V dopants.

Original languageAmerican English
Pages25-27
Number of pages3
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period16/06/1921/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

  • NREL/CP-5K00-73150

Keywords

  • cadmium compounds
  • carrier lifetime
  • hole density
  • II-VI semiconductors
  • selenium compounds
  • semiconductor thin films
  • solar cells

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