Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method

Darius Kuciauskas, Akira Nagaoka, Kenji Yoshino, Yoshitaro Nose, Michael Scarpulla

Research output: Contribution to conferencePaper

1 Scopus Citations

Abstract

Cd-rich CdTe single crystals were grown from Cd solvent in the traveling-heater method (THM) rather than the more common Te solvent used for high-resistivity CdTe. The growth process from Cd solution in terms of the solid-liquid interface shape and group-V doping under Cd-rich condition were investigated. Stable, flat solid-liquid interfaces can be obtained by optimizing THM furnace temperature profile. An apparent doping limit in the 10^16 to 10^17 cm^ -3 range which scales weakly with increasing group-V element concentrations in the Cd-rich CdTe samples were indicated from capacitance-voltage measurement. The two-photon excitation time-resolved photoluminescence revealed a bulk lifetime of 20-40 ns.
Original languageAmerican English
Pages1679-1681
Number of pages3
DOIs
StatePublished - 2018
Event2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C.
Duration: 25 Jun 201730 Jun 2017

Conference

Conference2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
CityWashington, D.C.
Period25/06/1730/06/17

NREL Publication Number

  • NREL/CP-5900-73996

Keywords

  • gettering
  • III-V growth
  • minority-carrier lifetime
  • silicon
  • tandem cells

Fingerprint

Dive into the research topics of 'Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method'. Together they form a unique fingerprint.

Cite this