Abstract
Cd-rich CdTe single crystals were grown from Cd solvent in the traveling-heater method (THM) rather than the more common Te solvent used for high-resistivity CdTe. The growth process from Cd solution in terms of the solid-liquid interface shape and group-V doping under Cd-rich condition were investigated. Stable, flat solid-liquid interfaces can be obtained by optimizing THM furnace temperature profile. An apparent doping limit in the 10^16 to 10^17 cm^ -3 range which scales weakly with increasing group-V element concentrations in the Cd-rich CdTe samples were indicated from capacitance-voltage measurement. The two-photon excitation time-resolved photoluminescence revealed a bulk lifetime of 20-40 ns.
Original language | American English |
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Pages | 1679-1681 |
Number of pages | 3 |
DOIs | |
State | Published - 2018 |
Event | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017 |
Conference
Conference | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) |
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City | Washington, D.C. |
Period | 25/06/17 → 30/06/17 |
NREL Publication Number
- NREL/CP-5900-73996
Keywords
- gettering
- III-V growth
- minority-carrier lifetime
- silicon
- tandem cells