Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method

Darius Kuciauskas; Akira Nagaoka; Kenji Yoshino; Yoshitaro Nose; Michael Scarpulla

doi:10.1109/PVSC.2017.8366462

Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method

Darius Kuciauskas
, Akira Nagaoka
, Kenji Yoshino
, Yoshitaro Nose
, Michael Scarpulla

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

1 Scopus Citations

Abstract

Cd-rich CdTe single crystals were grown from Cd solvent in the traveling-heater method (THM) rather than the more common Te solvent used for high-resistivity CdTe. The growth process from Cd solution in terms of the solid-liquid interface shape and group-V doping under Cd-rich condition were investigated. Stable, flat solid-liquid interfaces can be obtained by optimizing THM furnace temperature profile. An apparent doping limit in the 10^16 to 10^17 cm^ -3 range which scales weakly with increasing group-V element concentrations in the Cd-rich CdTe samples were indicated from capacitance-voltage measurement. The two-photon excitation time-resolved photoluminescence revealed a bulk lifetime of 20-40 ns.

Original language	American English
Pages	1679-1681
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2017.8366462
State	Published - 2018
Event	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
City	Washington, D.C.
Period	25/06/17 → 30/06/17

NLR Publication Number

NREL/CP-5900-73996

Keywords

gettering
III-V growth
minority-carrier lifetime
silicon
tandem cells

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10.1109/PVSC.2017.8366462

Cite this

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title = "Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method",

abstract = "Cd-rich CdTe single crystals were grown from Cd solvent in the traveling-heater method (THM) rather than the more common Te solvent used for high-resistivity CdTe. The growth process from Cd solution in terms of the solid-liquid interface shape and group-V doping under Cd-rich condition were investigated. Stable, flat solid-liquid interfaces can be obtained by optimizing THM furnace temperature profile. An apparent doping limit in the 10\textasciicircum{}16 to 10\textasciicircum{}17 cm\textasciicircum{} -3 range which scales weakly with increasing group-V element concentrations in the Cd-rich CdTe samples were indicated from capacitance-voltage measurement. The two-photon excitation time-resolved photoluminescence revealed a bulk lifetime of 20-40 ns.",

keywords = "gettering, III-V growth, minority-carrier lifetime, silicon, tandem cells",

author = "Darius Kuciauskas and Akira Nagaoka and Kenji Yoshino and Yoshitaro Nose and Michael Scarpulla",

year = "2018",

doi = "10.1109/PVSC.2017.8366462",

language = "American English",

pages = "1679--1681",

note = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ; Conference date: 25-06-2017 Through 30-06-2017",

}

TY - CONF

T1 - Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method

AU - Kuciauskas, Darius

AU - Nagaoka, Akira

AU - Yoshino, Kenji

AU - Nose, Yoshitaro

AU - Scarpulla, Michael

PY - 2018

Y1 - 2018

N2 - Cd-rich CdTe single crystals were grown from Cd solvent in the traveling-heater method (THM) rather than the more common Te solvent used for high-resistivity CdTe. The growth process from Cd solution in terms of the solid-liquid interface shape and group-V doping under Cd-rich condition were investigated. Stable, flat solid-liquid interfaces can be obtained by optimizing THM furnace temperature profile. An apparent doping limit in the 10^16 to 10^17 cm^ -3 range which scales weakly with increasing group-V element concentrations in the Cd-rich CdTe samples were indicated from capacitance-voltage measurement. The two-photon excitation time-resolved photoluminescence revealed a bulk lifetime of 20-40 ns.

AB - Cd-rich CdTe single crystals were grown from Cd solvent in the traveling-heater method (THM) rather than the more common Te solvent used for high-resistivity CdTe. The growth process from Cd solution in terms of the solid-liquid interface shape and group-V doping under Cd-rich condition were investigated. Stable, flat solid-liquid interfaces can be obtained by optimizing THM furnace temperature profile. An apparent doping limit in the 10^16 to 10^17 cm^ -3 range which scales weakly with increasing group-V element concentrations in the Cd-rich CdTe samples were indicated from capacitance-voltage measurement. The two-photon excitation time-resolved photoluminescence revealed a bulk lifetime of 20-40 ns.

KW - gettering

KW - III-V growth

KW - minority-carrier lifetime

KW - silicon

KW - tandem cells

U2 - 10.1109/PVSC.2017.8366462

DO - 10.1109/PVSC.2017.8366462

M3 - Paper

SP - 1679

EP - 1681

T2 - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Y2 - 25 June 2017 through 30 June 2017

ER -

Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method

Abstract

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NLR Publication Number

Keywords

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