Growth and Characterization of Arsenic-Doped CdTe1−xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method

Akira Nagaoka; Kensuke Nishioka; Kenji Yoshino; Darius Kuciauskas; Michael Scarpulla

doi:10.1007/s11664-020-08343-z

Growth and Characterization of Arsenic-Doped CdTe1−xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method

Akira Nagaoka, Kensuke Nishioka, Kenji Yoshino, Darius Kuciauskas, Michael Scarpulla

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe_1−xSe_x single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe_1−xSe_x are examined for different Se concentrations. CdTe_1−xSe_x single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 10¹⁷ cm⁻³ As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 10¹⁷ cm⁻³. These results help us to overcome the current roadblocks in device performance.

Original language	American English
Pages (from-to)	6971-6976
Number of pages	6
Journal	Journal of Electronic Materials
Volume	49
Issue number	11
DOIs	https://doi.org/10.1007/s11664-020-08343-z https://doi.org/10.1007/s11664-020-08343-z
State	Published - 1 Nov 2020

Bibliographical note

Publisher Copyright:
© 2020, The Minerals, Metals & Materials Society.

NREL Publication Number

NREL/JA-5900-76939

Keywords

CdTeSe
group-V doping
minority carrier lifetime
photovoltaics
single crystals
solar cells

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title = "Growth and Characterization of Arsenic-Doped CdTe1−xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method",

abstract = "The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe1−xSex single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1−xSex are examined for different Se concentrations. CdTe1−xSex single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 1017 cm−3 As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 1017 cm−3. These results help us to overcome the current roadblocks in device performance.",

keywords = "CdTeSe, group-V doping, minority carrier lifetime, photovoltaics, single crystals, solar cells",

author = "Akira Nagaoka and Kensuke Nishioka and Kenji Yoshino and Darius Kuciauskas and Michael Scarpulla",

note = "Publisher Copyright: {\textcopyright} 2020, The Minerals, Metals & Materials Society.",

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doi = "10.1007/s11664-020-08343-z",

language = "American English",

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T1 - Growth and Characterization of Arsenic-Doped CdTe1−xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method

AU - Nagaoka, Akira

AU - Nishioka, Kensuke

AU - Yoshino, Kenji

AU - Kuciauskas, Darius

AU - Scarpulla, Michael

PY - 2020/11/1

Y1 - 2020/11/1

N2 - The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe1−xSex single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1−xSex are examined for different Se concentrations. CdTe1−xSex single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 1017 cm−3 As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 1017 cm−3. These results help us to overcome the current roadblocks in device performance.

AB - The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe1−xSex single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1−xSex are examined for different Se concentrations. CdTe1−xSex single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 1017 cm−3 As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 1017 cm−3. These results help us to overcome the current roadblocks in device performance.

KW - CdTeSe

KW - group-V doping

KW - minority carrier lifetime

KW - photovoltaics

KW - single crystals

KW - solar cells

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U2 - 10.1007/s11664-020-08343-z

DO - 10.1007/s11664-020-08343-z

M3 - Article

AN - SCOPUS:85088860559

SN - 0361-5235

VL - 49

SP - 6971

EP - 6976

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -

Growth and Characterization of Arsenic-Doped CdTe1−xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method

Abstract

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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