Growth and Characterization of GaAs/Ge Epilayers Grown on Si Substrates by Molecular Beam Epitaxy

Research output: Contribution to journal › Article

NREL Publication Number

@article{dabedafef36d44bb9cd14fc412a15ce7,

title = "Growth and Characterization of GaAs/Ge Epilayers Grown on Si Substrates by Molecular Beam Epitaxy",

author = "NREL",

year = "1985",

doi = "10.1063/1.335551",

language = "American English",

volume = "58",

pages = "4186--4193",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}