Growth and Characterization of GaPNAs on Si

John Geisz; J. M. Olson; W. E. McMahon; T. Hannappel; K. Jones; H. Moutinho; M. M. Al-Jassim

doi:10.1557/proc-799-z1.10

Growth and Characterization of GaPNAs on Si

John Geisz, J. M. Olson, W. E. McMahon, T. Hannappel, K. Jones, H. Moutinho, M. M. Al-Jassim

Research output: Contribution to conference › Paper › peer-review

7 Scopus Citations

Abstract

The dilute nitrogen alloy GaPNAs can be lattice matched to silicon with band gaps ranging from 2.3 eV to less than 1.7eV making it of special interest for photovoltaic applications. We have studied the growth and structural quality of the alloy grown on vicinal Si(001) and GaP(001) substrates by MOCVD. Using a particular nucleation scheme, we have deposited 1-μm thick layers that are crack-free and exhibit narrow x-ray line widths. The FWHM of the (004) x-ray reflection from a GaP_1-xN_x epilayer decreases dramatically from ∼300 arcsec for x=0 to 18 arcsec for x = 0.021, The band gap of this alloy is 1.96 eV. With the addition of As (and more N), the x-ray line widths tend to increase slightly to 27 arcsec.

Original language	American English
Pages	27-31
Number of pages	5
DOIs	https://doi.org/10.1557/proc-799-z1.10
State	Published - 2003
Event	Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications - Boston, MA, United States Duration: 1 Dec 2003 → 4 Dec 2003

Conference

Conference	Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications
Country/Territory	United States
City	Boston, MA
Period	1/12/03 → 4/12/03

NREL Publication Number

NREL/CP-520-37303

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1557/proc-799-z1.10

Cite this

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title = "Growth and Characterization of GaPNAs on Si",

abstract = "The dilute nitrogen alloy GaPNAs can be lattice matched to silicon with band gaps ranging from 2.3 eV to less than 1.7eV making it of special interest for photovoltaic applications. We have studied the growth and structural quality of the alloy grown on vicinal Si(001) and GaP(001) substrates by MOCVD. Using a particular nucleation scheme, we have deposited 1-μm thick layers that are crack-free and exhibit narrow x-ray line widths. The FWHM of the (004) x-ray reflection from a GaP1-xNx epilayer decreases dramatically from ∼300 arcsec for x=0 to 18 arcsec for x = 0.021, The band gap of this alloy is 1.96 eV. With the addition of As (and more N), the x-ray line widths tend to increase slightly to 27 arcsec.",

author = "John Geisz and Olson, {J. M.} and McMahon, {W. E.} and T. Hannappel and K. Jones and H. Moutinho and Al-Jassim, {M. M.}",

year = "2003",

doi = "10.1557/proc-799-z1.10",

language = "American English",

pages = "27--31",

note = "Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications ; Conference date: 01-12-2003 Through 04-12-2003",

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T1 - Growth and Characterization of GaPNAs on Si

AU - Geisz, John

AU - Olson, J. M.

AU - McMahon, W. E.

AU - Hannappel, T.

AU - Jones, K.

AU - Moutinho, H.

AU - Al-Jassim, M. M.

PY - 2003

Y1 - 2003

N2 - The dilute nitrogen alloy GaPNAs can be lattice matched to silicon with band gaps ranging from 2.3 eV to less than 1.7eV making it of special interest for photovoltaic applications. We have studied the growth and structural quality of the alloy grown on vicinal Si(001) and GaP(001) substrates by MOCVD. Using a particular nucleation scheme, we have deposited 1-μm thick layers that are crack-free and exhibit narrow x-ray line widths. The FWHM of the (004) x-ray reflection from a GaP1-xNx epilayer decreases dramatically from ∼300 arcsec for x=0 to 18 arcsec for x = 0.021, The band gap of this alloy is 1.96 eV. With the addition of As (and more N), the x-ray line widths tend to increase slightly to 27 arcsec.

AB - The dilute nitrogen alloy GaPNAs can be lattice matched to silicon with band gaps ranging from 2.3 eV to less than 1.7eV making it of special interest for photovoltaic applications. We have studied the growth and structural quality of the alloy grown on vicinal Si(001) and GaP(001) substrates by MOCVD. Using a particular nucleation scheme, we have deposited 1-μm thick layers that are crack-free and exhibit narrow x-ray line widths. The FWHM of the (004) x-ray reflection from a GaP1-xNx epilayer decreases dramatically from ∼300 arcsec for x=0 to 18 arcsec for x = 0.021, The band gap of this alloy is 1.96 eV. With the addition of As (and more N), the x-ray line widths tend to increase slightly to 27 arcsec.

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T2 - Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications

Y2 - 1 December 2003 through 4 December 2003

ER -

Growth and Characterization of GaPNAs on Si

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