Growth and Characterization of Homoepitaxial ß-Ga2O3 Layers

Engineering

• Atomic Force Microscopy 100%
• Ray Diffraction 100%
• Power Electronics 33%
• Power Electronic Device 33%
• Doping Density 33%
• Wide Bandgap Semiconductor 33%
• Schottky Barrier Diode 33%
• Probing Depth 33%
• Sensitive Surface 33%
• Evanescent 33%

Material Science

• Atomic Force Microscopy 100%
• Film 33%
• Density 33%
• Molecular Beam Epitaxy 33%
• Schottky Barrier 33%
• Wide Bandgap Semiconductor 33%
• Epilayers 33%
• Surface (Surface Science) 33%

Physics

• Atomic Force Microscopy 100%
• Schottky Diode 33%
• Energy Gaps (Solid State) 33%
• Grazing Incidence 33%
• Measurement Method 33%
• Molecular Beam Epitaxy 33%