Growth and Characterization of InP/GaAs on SOI by MOCVD

Growth and Characterization of InP/GaAs on SOI by MOCVD

Research output: Contribution to conference › Paper

Original language	American English
Pages	247-252
Number of pages	6
State	Published - 1990
Event	Epitaxial Heterostructures: Materials Research Society Symposium - San Francisco, California Duration: 16 Apr 1990 → 19 Apr 1990

Conference

Conference	Epitaxial Heterostructures: Materials Research Society Symposium
City	San Francisco, California
Period	16/04/90 → 19/04/90

Bibliographical note

Work performed by Spire Corporation, Bedford, Massachusetts; North Carolina State University, Raleigh, North Carolina; University of California, Los Angeles, California; and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/CP-213-11967

Cite this

@conference{6f177763a1a848a98db3cc95a24a2f8b,

title = "Growth and Characterization of InP/GaAs on SOI by MOCVD",

author = "NREL",

note = "Work performed by Spire Corporation, Bedford, Massachusetts; North Carolina State University, Raleigh, North Carolina; University of California, Los Angeles, California; and Solar Energy Research Institute, Golden, Colorado; Epitaxial Heterostructures: Materials Research Society Symposium ; Conference date: 16-04-1990 Through 19-04-1990",

year = "1990",

language = "American English",

pages = "247--252",

}

TY - CONF

T1 - Growth and Characterization of InP/GaAs on SOI by MOCVD

AU - NREL, null

N1 - Work performed by Spire Corporation, Bedford, Massachusetts; North Carolina State University, Raleigh, North Carolina; University of California, Los Angeles, California; and Solar Energy Research Institute, Golden, Colorado

PY - 1990

Y1 - 1990

M3 - Paper

SP - 247

EP - 252

T2 - Epitaxial Heterostructures: Materials Research Society Symposium

Y2 - 16 April 1990 through 19 April 1990

ER -