Growth and Characterization of Radio Frequency Magnetron Sputter-Deposited Zinc Stannate, Zn2SnO4, Thin Films

David L. Young, Helio Moutinho, Yanfa Yan, Timothy J. Coutts

Research output: Contribution to journalArticlepeer-review

210 Scopus Citations

Abstract

Single-phase, spinel zinc stannate (Zn 2SnO 4) thin films were grown by rf magnetron sputtering onto glass substrates. Uniaxially oriented films with resistivities of 10 -2-10 -3cm, mobilities of 16-26 cm 2/Vs, n-type carrier concentrations in the low 10 19cm -3 range were achieved. X-ray diffraction peak intensity studies established the films to be in the inverse spinel configuration. 119Sn Mössbauer studies identified two octahedral Sn sites, each with a unique quadrupole splitting, but with a common isomer shift consistent with Sn +4. A pronounced Burstein-Moss shift moved the optical band gap from 3.35 to as high as 3.89 eV. Density-of-states effective mass, relaxation time, mobility, Fermi energy level, a scattering parameter were calculated from resistivity, Hall, Seebeck, Nernst coefficient transport data. Effective-mass values increased with carrier concentration from 0.16 to 0.26 m e as the Fermi energy increased from 0.2 to 0.9 eV above the conduction-band minimum. A bottom-of-the-band effective-mass value of 0.15 m e is in good agreement with local density approximation calculations. Temperature-dependent transport measurements and calculated scattering parameters correlated well with ionized impurity scattering with screening by free electrons for highly degenerate films.

Original languageAmerican English
Pages (from-to)310-319
Number of pages10
JournalJournal of Applied Physics
Volume92
Issue number1
DOIs
StatePublished - 1 Jul 2002

NREL Publication Number

  • NREL/JA-520-32904

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