Growth and Characterization of Spontaneously Ordered AlInAs and GaInAs on InP

Douglas J. Arent, M. Bode, P. Ahrenkiel, K. A. Bertness, Sarah R. Kurtz, C. Kramer, J. M. Olson

Research output: Contribution to conferencePaperpeer-review


Spontaneous CuPt-type ordering of Group III atoms on the (111) subplanes of the GaInAs 2 and AlInAs2 epitaxially deposited by atmospheric pressure organometallic vapor phase epitaxy is observed by transmission electron microscopy. We find positive correlation between the observation of CuPt-like (111) superlattice diffraction spots in transmission electron diffraction (TED) patterns and reduced band gap energies, with a reduction of more than 75 meV for GaInAs2 and 25 meV for AlInAs2. For these materials, ordering depends strongly on growth temperature, but only moderately on substrate misorientation. Room temperature time-resolved photoconductivity of ordered GaInAs2 exhibit 50 μsec decay and behavior indicative of carrier localization.

Original languageAmerican English
Number of pages7
StatePublished - 1994
EventEpitaxial Growth Processes - Los Angeles, CA, USA
Duration: 26 Jan 199427 Jan 1994


ConferenceEpitaxial Growth Processes
CityLos Angeles, CA, USA

NREL Publication Number

  • NREL/CP-451-6218


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