Growth and Characterization of Spontaneously Ordered AlInAs and GaInAs on InP

Douglas J. Arent; M. Bode; P. Ahrenkiel; K. A. Bertness; Sarah R. Kurtz; C. Kramer; J. M. Olson

Growth and Characterization of Spontaneously Ordered AlInAs and GaInAs on InP

Douglas J. Arent, M. Bode, P. Ahrenkiel, K. A. Bertness, Sarah R. Kurtz, C. Kramer, J. M. Olson

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

Spontaneous CuPt-type ordering of Group III atoms on the (111) subplanes of the GaInAs₂ and AlInAs₂ epitaxially deposited by atmospheric pressure organometallic vapor phase epitaxy is observed by transmission electron microscopy. We find positive correlation between the observation of CuPt-like (111) superlattice diffraction spots in transmission electron diffraction (TED) patterns and reduced band gap energies, with a reduction of more than 75 meV for GaInAs₂ and 25 meV for AlInAs₂. For these materials, ordering depends strongly on growth temperature, but only moderately on substrate misorientation. Room temperature time-resolved photoconductivity of ordered GaInAs₂ exhibit 50 μsec decay and behavior indicative of carrier localization.

Original language	American English
Pages	68-74
Number of pages	7
State	Published - 1994
Event	Epitaxial Growth Processes - Los Angeles, CA, USA Duration: 26 Jan 1994 → 27 Jan 1994

Conference

Conference	Epitaxial Growth Processes
City	Los Angeles, CA, USA
Period	26/01/94 → 27/01/94

NREL Publication Number

NREL/CP-451-6218

Cite this

@conference{6ce288aca5714e4dbb111577338971bd,

title = "Growth and Characterization of Spontaneously Ordered AlInAs and GaInAs on InP",

abstract = "Spontaneous CuPt-type ordering of Group III atoms on the (111) subplanes of the GaInAs 2 and AlInAs2 epitaxially deposited by atmospheric pressure organometallic vapor phase epitaxy is observed by transmission electron microscopy. We find positive correlation between the observation of CuPt-like (111) superlattice diffraction spots in transmission electron diffraction (TED) patterns and reduced band gap energies, with a reduction of more than 75 meV for GaInAs2 and 25 meV for AlInAs2. For these materials, ordering depends strongly on growth temperature, but only moderately on substrate misorientation. Room temperature time-resolved photoconductivity of ordered GaInAs2 exhibit 50 μsec decay and behavior indicative of carrier localization.",

author = "Arent, {Douglas J.} and M. Bode and P. Ahrenkiel and Bertness, {K. A.} and Kurtz, {Sarah R.} and C. Kramer and Olson, {J. M.}",

year = "1994",

language = "American English",

pages = "68--74",

note = "Epitaxial Growth Processes ; Conference date: 26-01-1994 Through 27-01-1994",

}

TY - CONF

T1 - Growth and Characterization of Spontaneously Ordered AlInAs and GaInAs on InP

AU - Arent, Douglas J.

AU - Bode, M.

AU - Ahrenkiel, P.

AU - Bertness, K. A.

AU - Kurtz, Sarah R.

AU - Kramer, C.

AU - Olson, J. M.

PY - 1994

Y1 - 1994

N2 - Spontaneous CuPt-type ordering of Group III atoms on the (111) subplanes of the GaInAs 2 and AlInAs2 epitaxially deposited by atmospheric pressure organometallic vapor phase epitaxy is observed by transmission electron microscopy. We find positive correlation between the observation of CuPt-like (111) superlattice diffraction spots in transmission electron diffraction (TED) patterns and reduced band gap energies, with a reduction of more than 75 meV for GaInAs2 and 25 meV for AlInAs2. For these materials, ordering depends strongly on growth temperature, but only moderately on substrate misorientation. Room temperature time-resolved photoconductivity of ordered GaInAs2 exhibit 50 μsec decay and behavior indicative of carrier localization.

AB - Spontaneous CuPt-type ordering of Group III atoms on the (111) subplanes of the GaInAs 2 and AlInAs2 epitaxially deposited by atmospheric pressure organometallic vapor phase epitaxy is observed by transmission electron microscopy. We find positive correlation between the observation of CuPt-like (111) superlattice diffraction spots in transmission electron diffraction (TED) patterns and reduced band gap energies, with a reduction of more than 75 meV for GaInAs2 and 25 meV for AlInAs2. For these materials, ordering depends strongly on growth temperature, but only moderately on substrate misorientation. Room temperature time-resolved photoconductivity of ordered GaInAs2 exhibit 50 μsec decay and behavior indicative of carrier localization.

UR - http://www.scopus.com/inward/record.url?scp=0028715550&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0028715550

SP - 68

EP - 74

T2 - Epitaxial Growth Processes

Y2 - 26 January 1994 through 27 January 1994

ER -

Growth and Characterization of Spontaneously Ordered AlInAs and GaInAs on InP

Abstract

Conference

NREL Publication Number

Other files and links

Fingerprint

Cite this