Growth and Patterning of GaAs/Ge Single Crystal Layers on Si Substrates by Molecular Beam Epitaxy

doi:10.1063/1.95170

Growth and Patterning of GaAs/Ge Single Crystal Layers on Si Substrates by Molecular Beam Epitaxy

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	274-276
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	3
DOIs	https://doi.org/10.1063/1.95170
State	Published - 1984

Bibliographical note

Work performed by Department of Electrical Engineering, University of Colorado, Boulder, Colorado; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts; and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/JA-213-3667

Access to Document

10.1063/1.95170

Cite this

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title = "Growth and Patterning of GaAs/Ge Single Crystal Layers on Si Substrates by Molecular Beam Epitaxy",

author = "NREL",

note = "Work performed by Department of Electrical Engineering, University of Colorado, Boulder, Colorado; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts; and Solar Energy Research Institute, Golden, Colorado",

year = "1984",

doi = "10.1063/1.95170",

language = "American English",

volume = "45",

pages = "274--276",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Growth and Patterning of GaAs/Ge Single Crystal Layers on Si Substrates by Molecular Beam Epitaxy

AU - NREL, null

N1 - Work performed by Department of Electrical Engineering, University of Colorado, Boulder, Colorado; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts; and Solar Energy Research Institute, Golden, Colorado

PY - 1984

Y1 - 1984

U2 - 10.1063/1.95170

DO - 10.1063/1.95170

M3 - Article

SN - 0003-6951

VL - 45

SP - 274

EP - 276

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -