Growth and Patterning of GaAs/Ge Single Crystal Layers on Si Substrates by Molecular Beam Epitaxy

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)274-276
    Number of pages3
    JournalApplied Physics Letters
    Issue number3
    StatePublished - 1984

    Bibliographical note

    Work performed by Department of Electrical Engineering, University of Colorado, Boulder, Colorado; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts; and Solar Energy Research Institute, Golden, Colorado

    NREL Publication Number

    • ACNR/JA-213-3667

    Cite this