Growth and Properties of Silicon Filaments for Photovoltaic Applications

Research output: Contribution to conferencePaper


Thin silicon filaments were grown from the melt by three different methods: (a) RF-heated float-zone pedestal growth of high-purity, dislocation-free, single-crystal filaments, (b) growth of <112> axis, (111) face, dendrite; filaments at high pulling rates from a supercooled melt in a quartz crucible, and (c) capillary die growth of thin-walled, small-diameter Si tube-filaments with high ratio ofsurface area to volume and concomitant device structure; advantages. Minority-carrier lifetime t was used to assess the filaments. For the three growth methods listed above, values as high as 660 msec, 53 msec, and 42 msec were observed, respectively. Thin silicon filaments with good crystallographic perfection, grown at high speeds, may be useful as active semiconductor elements in multiplelinear-concentrator-array PV systems and in other optoelectronic applications.
Original languageAmerican English
Number of pages5
StatePublished - 1997
Event26th IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997


Conference26th IEEE Photovoltaic Specialists Conference
CityAnaheim, California

Bibliographical note

Available electronically only

NREL Publication Number

  • NREL/CP-450-22927


Dive into the research topics of 'Growth and Properties of Silicon Filaments for Photovoltaic Applications'. Together they form a unique fingerprint.

Cite this