@article{4c9a9e7a5887430f972400b0f5e9b23c,
title = "Growth and Properties of the Dilute Bismide Semiconductor GaAs1-xBix a Complementary Alloy to the Dilute Nitrides",
keywords = "bismide semiconductor alloys, dilute bismides, epitaxial semiconductor films, gallium arsenide, MBE, molecular beam epitaxy, molecular beam epitaxy, nanotechnology",
author = "NREL",
year = "2008",
doi = "10.1504/IJNT.2009.022689",
language = "American English",
volume = "5",
pages = "963--983",
journal = "International Journal of Nanotechnology",
issn = "1475-7435",
publisher = "Inderscience Enterprises Ltd",
number = "9-12",
}