Growth and Properties of the Dilute Bismide Semiconductor GaAs1-xBix a Complementary Alloy to the Dilute Nitrides

Research output: Contribution to journalArticlepeer-review

Original languageAmerican English
Pages (from-to)963-983
Number of pages21
JournalInternational Journal of Nanotechnology
Issue number9-12
StatePublished - 2008

NREL Publication Number

  • NREL/JA-590-44676


  • bismide semiconductor alloys
  • dilute bismides
  • epitaxial semiconductor films
  • gallium arsenide
  • MBE
  • molecular beam epitaxy
  • molecular beam epitaxy
  • nanotechnology

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