Growth, Nucleation, and Electrical Properties of Molecular Beam Epitaxially Grown, As-Doped Ge on Si Substrates

doi:10.1116/1.573999

Growth, Nucleation, and Electrical Properties of Molecular Beam Epitaxially Grown, As-Doped Ge on Si Substrates

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	889-893
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	4
Issue number	3, Part I
DOIs	https://doi.org/10.1116/1.573999
State	Published - 1986

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado and Department of Electrical Engineering, Colorado State University, Golden, Colorado

NREL Publication Number

ACNR/JA-213-6544

Access to Document

10.1116/1.573999

Cite this

@article{f107ed2578a04e309abc299bf435e377,

title = "Growth, Nucleation, and Electrical Properties of Molecular Beam Epitaxially Grown, As-Doped Ge on Si Substrates",

author = "NREL",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado and Department of Electrical Engineering, Colorado State University, Golden, Colorado",

year = "1986",

doi = "10.1116/1.573999",

language = "American English",

volume = "4",

pages = "889--893",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3, Part I",

}

TY - JOUR

T1 - Growth, Nucleation, and Electrical Properties of Molecular Beam Epitaxially Grown, As-Doped Ge on Si Substrates

AU - NREL, null

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado and Department of Electrical Engineering, Colorado State University, Golden, Colorado

PY - 1986

Y1 - 1986

U2 - 10.1116/1.573999

DO - 10.1116/1.573999

M3 - Article

SN - 0734-2101

VL - 4

SP - 889

EP - 893

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3, Part I

ER -