Growth, Nucleation, and Electrical Properties of Molecular Beam Epitaxially Grown, As-Doped Ge on Si Substrates

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)889-893
    Number of pages5
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Issue number3, Part I
    StatePublished - 1986

    Bibliographical note

    Work performed by Solar Energy Research Institute, Golden, Colorado and Department of Electrical Engineering, Colorado State University, Golden, Colorado

    NREL Publication Number

    • ACNR/JA-213-6544

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