Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Kevin Schulte, Wondwosen Metaferia, John Simon, David Guiling, Aaron Ptak, Kevin Udwary, Gregg Dodson, Jacob Leach

Research output: Contribution to journalArticlepeer-review

19 Scopus Citations


We demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. These results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

Original languageAmerican English
Pages (from-to)8405-8410
Number of pages6
JournalACS Applied Energy Materials
Issue number12
StatePublished - 23 Dec 2019

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

NREL Publication Number

  • NREL/JA-5900-75176


  • AlGaAs
  • AlGaInP
  • AlInP
  • hydride vapor phase epitaxy
  • III-V semiconductors
  • photovoltaics
  • solar energy


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