Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Kevin Schulte; Wondwosen Metaferia; John Simon; David Guiling; Aaron Ptak; Kevin Udwary; Gregg Dodson; Jacob Leach

doi:10.1021/acsaem.9b02080

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Kevin Schulte, Wondwosen Metaferia, John Simon, David Guiling, Aaron Ptak, Kevin Udwary, Gregg Dodson, Jacob Leach

Chemistry and Nanoscience

Kyma Technologies

Research output: Contribution to journal › Article › peer-review

19 Scopus Citations

Abstract

We demonstrate hydride vapor phase epitaxy (HVPE) of Al_xGa_1-xAs, Al_xIn_1-xP, and Al_xGa_yIn_1-x-yP using an AlCl₃ precursor. We study the growth of the Al_xGa_1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl₃. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of Al_xGa_1-xAs, and for the first time by HVPE, Al_xIn_1-xP and Al_xGa_yIn_1-x-yP. These results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

Original language	American English
Pages (from-to)	8405-8410
Number of pages	6
Journal	ACS Applied Energy Materials
Volume	2
Issue number	12
DOIs	https://doi.org/10.1021/acsaem.9b02080 https://doi.org/10.1021/acsaem.9b02080
State	Published - 23 Dec 2019

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

NREL Publication Number

NREL/JA-5900-75176

Keywords

AlGaAs
AlGaInP
AlInP
hydride vapor phase epitaxy
III-V semiconductors
photovoltaics
solar energy

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@article{120a44defca04a4d85d74ba23c4c2fef,

title = "Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy",

abstract = "We demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. These results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.",

keywords = "AlGaAs, AlGaInP, AlInP, hydride vapor phase epitaxy, III-V semiconductors, photovoltaics, solar energy",

author = "Kevin Schulte and Wondwosen Metaferia and John Simon and David Guiling and Aaron Ptak and Kevin Udwary and Gregg Dodson and Jacob Leach",

note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = dec,

day = "23",

doi = "10.1021/acsaem.9b02080",

language = "American English",

volume = "2",

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journal = "ACS Applied Energy Materials",

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TY - JOUR

T1 - Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

AU - Schulte, Kevin

AU - Metaferia, Wondwosen

AU - Simon, John

AU - Guiling, David

AU - Ptak, Aaron

AU - Udwary, Kevin

AU - Dodson, Gregg

AU - Leach, Jacob

PY - 2019/12/23

Y1 - 2019/12/23

N2 - We demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. These results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

AB - We demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. These results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

KW - AlGaAs

KW - AlGaInP

KW - AlInP

KW - hydride vapor phase epitaxy

KW - III-V semiconductors

KW - photovoltaics

KW - solar energy

UR - http://www.scopus.com/inward/record.url?scp=85076725684&partnerID=8YFLogxK

U2 - 10.1021/acsaem.9b02080

DO - 10.1021/acsaem.9b02080

M3 - Article

AN - SCOPUS:85076725684

SN - 2574-0962

VL - 2

SP - 8405

EP - 8410

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 12

ER -

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Abstract

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NREL Publication Number

Keywords

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