Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Kevin Schulte; Wondwosen Metaferia; John Simon; David Guiling; Aaron Ptak; Kevin Udwary; Gregg Dodson; Jacob Leach

doi:10.1021/acsaem.9b02080

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Kevin Schulte
, Wondwosen Metaferia
, John Simon
, David Guiling
, Aaron Ptak
, Kevin Udwary
, Gregg Dodson
, Jacob Leach

Chemistry and Nanoscience

Kyma Technologies

Research output: Contribution to journal › Article › peer-review

23 Scopus Citations

Abstract

We demonstrate hydride vapor phase epitaxy (HVPE) of Al_xGa_1-xAs, Al_xIn_1-xP, and Al_xGa_yIn_1-x-yP using an AlCl₃ precursor. We study the growth of the Al_xGa_1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl₃. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of Al_xGa_1-xAs, and for the first time by HVPE, Al_xIn_1-xP and Al_xGa_yIn_1-x-yP. These results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

Original language	American English
Pages (from-to)	8405-8410
Number of pages	6
Journal	ACS Applied Energy Materials
Volume	2
Issue number	12
DOIs	https://doi.org/10.1021/acsaem.9b02080 https://doi.org/10.1021/acsaem.9b02080
State	Published - 23 Dec 2019

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

NLR Publication Number

NREL/JA-5900-75176

Keywords

AlGaAs
AlGaInP
AlInP
hydride vapor phase epitaxy
III-V semiconductors
photovoltaics
solar energy

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@article{120a44defca04a4d85d74ba23c4c2fef,

title = "Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy",

abstract = "We demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. These results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.",

keywords = "AlGaAs, AlGaInP, AlInP, hydride vapor phase epitaxy, III-V semiconductors, photovoltaics, solar energy",

author = "Kevin Schulte and Wondwosen Metaferia and John Simon and David Guiling and Aaron Ptak and Kevin Udwary and Gregg Dodson and Jacob Leach",

note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = dec,

day = "23",

doi = "10.1021/acsaem.9b02080",

language = "American English",

volume = "2",

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journal = "ACS Applied Energy Materials",

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publisher = "American Chemical Society",

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TY - JOUR

T1 - Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

AU - Schulte, Kevin

AU - Metaferia, Wondwosen

AU - Simon, John

AU - Guiling, David

AU - Ptak, Aaron

AU - Udwary, Kevin

AU - Dodson, Gregg

AU - Leach, Jacob

PY - 2019/12/23

Y1 - 2019/12/23

N2 - We demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. These results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

AB - We demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP using an AlCl3 precursor. We study the growth of the AlxGa1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1-xAs, and for the first time by HVPE, AlxIn1-xP and AlxGayIn1-x-yP. These results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

KW - AlGaAs

KW - AlGaInP

KW - AlInP

KW - hydride vapor phase epitaxy

KW - III-V semiconductors

KW - photovoltaics

KW - solar energy

UR - https://www.scopus.com/pages/publications/85076725684

U2 - 10.1021/acsaem.9b02080

DO - 10.1021/acsaem.9b02080

M3 - Article

AN - SCOPUS:85076725684

SN - 2574-0962

VL - 2

SP - 8405

EP - 8410

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 12

ER -

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Abstract

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Keywords

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