Growth of Amorphous and Epitaxial ZnSiP2-Si Alloys on Si

Aaron D. Martinez, Elisa M. Miller, Andrew G. Norman, Rekha R. Schnepf, Noemi Leick, Craig Perkins, Paul Stradins, Eric S. Toberer, Adele C. Tamboli

Research output: Contribution to journalArticlepeer-review

19 Scopus Citations


ZnSiP2 is a wide band gap material that is lattice matched with Si, offering the potential for Si-based optoelectronic materials and devices, including multijunction photovoltaics. We present a carbon-free chemical vapor deposition process for the growth of both epitaxial and amorphous thin films of ZnSiP2-Si alloys with tunable Si content on Si substrates. Si alloy content is widely tunable across the full composition space in amorphous films. Optical absorption of these films reveals relatively little variation with Si content, despite the fact that ZnSiP2 has a much wider band gap of 2.1 eV. Post-growth crystallization of Si-rich films resulted in epitaxial alignment, as measured by X-ray diffraction and transmission electron microscopy. These films have an optical absorption onset near 1.1 eV, suggesting the possibility of band gap tuning with Si content in crystalline films. The optical absorption is comparably strong to pure ZnSiP2, suggesting a more direct transition than in pure Si.

Original languageAmerican English
Pages (from-to)2696-2703
Number of pages8
JournalJournal of Materials Chemistry C
Issue number11
StatePublished - 2018

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2018.

NREL Publication Number

  • NREL/JA-5J00-70613


  • band gap materials
  • chemical vapor deposition
  • multijunction photovoltaics
  • optoelectronic materials and devices
  • solar-photochemistry
  • thin films


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