Growth of Antiphase-Domain-Free GaP on Si Substrates by Metalorganic Chemical Vapor Deposition using an in situ AsH3 Surface Preparation

Emily Warren; Alan Kibbler; Ryan France; Andrew Norman; Pauls Stradins; William McMahon

doi:10.1063/1.4929714

Growth of Antiphase-Domain-Free GaP on Si Substrates by Metalorganic Chemical Vapor Deposition using an in situ AsH3 Surface Preparation

Emily Warren, Alan Kibbler, Ryan France, Andrew Norman, Pauls Stradins, William McMahon

Research output: Contribution to journal › Article › peer-review

49 Scopus Citations

Abstract

Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH₃ in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH₃ etching quickly removes O and C contaminants at a relatively low temperature (690-740 °C), and creates a single-domain "A-type" As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration of III-Vs and Si at an industrial scale.

Original language	American English
Article number	Article No. 082109
Number of pages	4
Journal	Applied Physics Letters
Volume	107
Issue number	8
DOIs	https://doi.org/10.1063/1.4929714 https://doi.org/10.1063/1.4929714
State	Published - 24 Aug 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

NREL/JA-5J00-64375

Keywords

epitaxy
III-V semiconductors
metal-organic chemical vapor deposition (MOCVD)
semiconductor growth
surface cleaning

Access to Document

Cite this

@article{c92b19f4f86740c99c4e1054fb41249e,

title = "Growth of Antiphase-Domain-Free GaP on Si Substrates by Metalorganic Chemical Vapor Deposition using an in situ AsH3 Surface Preparation",

abstract = "Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH3 in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH3 etching quickly removes O and C contaminants at a relatively low temperature (690-740 °C), and creates a single-domain {"}A-type{"} As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration of III-Vs and Si at an industrial scale.",

keywords = "epitaxy, III-V semiconductors, metal-organic chemical vapor deposition (MOCVD), semiconductor growth, surface cleaning",

author = "Emily Warren and Alan Kibbler and Ryan France and Andrew Norman and Pauls Stradins and William McMahon",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = aug,

day = "24",

doi = "10.1063/1.4929714",

language = "American English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Growth of Antiphase-Domain-Free GaP on Si Substrates by Metalorganic Chemical Vapor Deposition using an in situ AsH3 Surface Preparation

AU - Warren, Emily

AU - Kibbler, Alan

AU - France, Ryan

AU - Norman, Andrew

AU - Stradins, Pauls

AU - McMahon, William

PY - 2015/8/24

Y1 - 2015/8/24

N2 - Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH3 in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH3 etching quickly removes O and C contaminants at a relatively low temperature (690-740 °C), and creates a single-domain "A-type" As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration of III-Vs and Si at an industrial scale.

AB - Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH3 in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH3 etching quickly removes O and C contaminants at a relatively low temperature (690-740 °C), and creates a single-domain "A-type" As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration of III-Vs and Si at an industrial scale.

KW - epitaxy

KW - III-V semiconductors

KW - metal-organic chemical vapor deposition (MOCVD)

KW - semiconductor growth

KW - surface cleaning

UR - http://www.scopus.com/inward/record.url?scp=84940475084&partnerID=8YFLogxK

U2 - 10.1063/1.4929714

DO - 10.1063/1.4929714

M3 - Article

AN - SCOPUS:84940475084

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - Article No. 082109

ER -

Growth of Antiphase-Domain-Free GaP on Si Substrates by Metalorganic Chemical Vapor Deposition using an in situ AsH3 Surface Preparation

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this