Growth of Antiphase-Domain-Free GaP on Si Substrates by Metalorganic Chemical Vapor Deposition using an in situ AsH3 Surface Preparation: Article No. 082109

Research output: Contribution to journalArticlepeer-review

48 Scopus Citations
Original languageAmerican English
Number of pages4
JournalApplied Physics Letters
Issue number8
StatePublished - 2015

NREL Publication Number

  • NREL/JA-5J00-64375


  • epitaxy
  • III-V semiconductors
  • metal-organic chemical vapor deposition (MOCVD)
  • semiconductor growth
  • surface cleaning

Cite this