Growth of Antiphase-Domain-Free GaP on Si Substrates by Metalorganic Chemical Vapor Deposition using an in situ AsH3 Surface Preparation: Article No. 082109

Research output: Contribution to journalArticlepeer-review

48 Scopus Citations
Original languageAmerican English
Number of pages4
JournalApplied Physics Letters
Volume107
Issue number8
DOIs
StatePublished - 2015

NREL Publication Number

  • NREL/JA-5J00-64375

Keywords

  • epitaxy
  • III-V semiconductors
  • metal-organic chemical vapor deposition (MOCVD)
  • semiconductor growth
  • surface cleaning

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