Growth of GaAs on Single-Crystal Layered-2D Bi2Se3

William McMahon, Adele Tamboli, Andrew Norman, Celeste Melamed, Eric Toberer

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2 Scopus Citations


This work demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi2Se3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi2Se3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi2Se3 to form Ga2Se3, which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga–Bi2Se3 interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.

Original languageAmerican English
Article numberArticle No. 125457
Number of pages5
JournalJournal of Crystal Growth
StatePublished - 15 Mar 2020

Bibliographical note

Publisher Copyright:
© 2020 Elsevier B.V.

NREL Publication Number

  • NREL/JA-5900-74782


  • characterization
  • layered 2D materials
  • metalorganic chemical vapor deposition
  • semiconducting gallium arsenide
  • semiconducting II-VI materials
  • semiconducting III-V materials


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