Growth of (GaAs)1-x(Ge2)x by Metalorganic Chemical Vapor Deposition

S. M. Vernon, M. M. Sanfacon, R. K. Ahrenkiel

Research output: Contribution to journalArticlepeer-review

3 Scopus Citations


We report deposition of (GaAs)1_x(Ge2)x on GaAs substrates over the entire alloy range. Growth was performed by metalorganic chemical vapor deposition at temperatures of 675 to 750°C, at 50 and 760 Torr, using trimethylgallium, arsine, and germane at rates of 2-10 μ/h. Extrinsic doping was achieved using silane and dimethylzinc in hydrogen. Characterization methods include double-crystal x-ray rocking curve analysis, Auger electron spectroscopy, 5K photoluminescence, optical transmission spectra, Hall-effect, and Polaron profiling. Results achieved include an x-ray rocking curve full-width at half maximum as narrow as 12 arc-s, Auger compositions spanning the alloy range from x = 0.03 to x = 0.94, specular surface morphologies, and 5K photoluminescence to wavelengths as long as 1620 nm. Undoped films are n type, with n ≈ 1 × 1017 cm-3. Extrinsic doping with silane and dimethylzinc have resulted in films which are n type (1017 to 1018 cnr-3) or p type (5 × 1018 to 1 × 1020 cm-3). Mobilities are generally ≈ 50 cm2/V-s and 500 cm2/V-s, for p and n films, respectively.

Original languageAmerican English
Pages (from-to)147-151
Number of pages5
JournalJournal of Electronic Materials
Issue number2
StatePublished - 1994

NREL Publication Number

  • ACNR/JA-15875


  • gallium arsenide-germanium alloy
  • III-V-IV compound
  • metalorganic chemical vapor deposition


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