Growth of GaAs/AlGaAs Quantum Dots Using Self-Organized InP Stressors

M. C. Hanna, Z. H. Lu, A. F. Cahill, M. J. Heben, A. J. Nozik

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


GaAs quantum dots were formed in a near surface quantum well (QW) by producing lateral confinement with self-organized InP stressors grown in situ by metal organic chemical vapor deposition (MOCVD). We report here the influence of growth conditions on InP island formation on AlGaAs/GaAs single QW structures and also the influence of the QW structure on the optical properties of the GaAs quantum dots. We observe strong photoluminescence up to room temperature from the strain-induced quantum dots with energy redshifts of 70 meV below the QW peak.

Original languageAmerican English
Number of pages6
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 27 Nov 19951 Dec 1995


ConferenceProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA

NREL Publication Number

  • NREL/CP-21710


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