Growth of GaAs/AlGaAs Quantum Dots Using Self-Organized InP Stressors

M. C. Hanna; Z. H. Lu; A. F. Cahill; M. J. Heben; A. J. Nozik

Growth of GaAs/AlGaAs Quantum Dots Using Self-Organized InP Stressors

M. C. Hanna
, Z. H. Lu
, A. F. Cahill
, M. J. Heben
, A. J. Nozik

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

GaAs quantum dots were formed in a near surface quantum well (QW) by producing lateral confinement with self-organized InP stressors grown in situ by metal organic chemical vapor deposition (MOCVD). We report here the influence of growth conditions on InP island formation on AlGaAs/GaAs single QW structures and also the influence of the QW structure on the optical properties of the GaAs quantum dots. We observe strong photoluminescence up to room temperature from the strain-induced quantum dots with energy redshifts of 70 meV below the QW peak.

Original language	American English
Pages	129-134
Number of pages	6
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 27 Nov 1995 → 1 Dec 1995

Conference

Conference	Proceedings of the 1995 MRS Fall Meeting
City	Boston, MA, USA
Period	27/11/95 → 1/12/95

NLR Publication Number

NREL/CP-21710

Cite this

@conference{b0350bfe8f824369b0b943be71bd23ff,

title = "Growth of GaAs/AlGaAs Quantum Dots Using Self-Organized InP Stressors",

abstract = "GaAs quantum dots were formed in a near surface quantum well (QW) by producing lateral confinement with self-organized InP stressors grown in situ by metal organic chemical vapor deposition (MOCVD). We report here the influence of growth conditions on InP island formation on AlGaAs/GaAs single QW structures and also the influence of the QW structure on the optical properties of the GaAs quantum dots. We observe strong photoluminescence up to room temperature from the strain-induced quantum dots with energy redshifts of 70 meV below the QW peak.",

author = "Hanna, \{M. C.\} and Lu, \{Z. H.\} and Cahill, \{A. F.\} and Heben, \{M. J.\} and Nozik, \{A. J.\}",

year = "1996",

language = "American English",

pages = "129--134",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 27-11-1995 Through 01-12-1995",

}

TY - CONF

T1 - Growth of GaAs/AlGaAs Quantum Dots Using Self-Organized InP Stressors

AU - Hanna, M. C.

AU - Lu, Z. H.

AU - Cahill, A. F.

AU - Heben, M. J.

AU - Nozik, A. J.

PY - 1996

Y1 - 1996

N2 - GaAs quantum dots were formed in a near surface quantum well (QW) by producing lateral confinement with self-organized InP stressors grown in situ by metal organic chemical vapor deposition (MOCVD). We report here the influence of growth conditions on InP island formation on AlGaAs/GaAs single QW structures and also the influence of the QW structure on the optical properties of the GaAs quantum dots. We observe strong photoluminescence up to room temperature from the strain-induced quantum dots with energy redshifts of 70 meV below the QW peak.

AB - GaAs quantum dots were formed in a near surface quantum well (QW) by producing lateral confinement with self-organized InP stressors grown in situ by metal organic chemical vapor deposition (MOCVD). We report here the influence of growth conditions on InP island formation on AlGaAs/GaAs single QW structures and also the influence of the QW structure on the optical properties of the GaAs quantum dots. We observe strong photoluminescence up to room temperature from the strain-induced quantum dots with energy redshifts of 70 meV below the QW peak.

UR - https://www.scopus.com/pages/publications/0029715070

M3 - Paper

AN - SCOPUS:0029715070

SP - 129

EP - 134

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 27 November 1995 through 1 December 1995

ER -

Growth of GaAs/AlGaAs Quantum Dots Using Self-Organized InP Stressors

Abstract

Conference

NLR Publication Number

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