Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition

We report on the first known growth of high-quality epitaxial Si via the hot wire chemical vapor deposition (HWCVD) method. This method yields device-quality epitaxial Si at the comparatively low temperatures of 195o to 450oC, and relatively high growth rates of 3 to 20 ?/sec. Layers up to 4500-? thick have been grown. These epitaxial layers have been characterized by transmission electronmicroscopy (TEM), indicating large regions of nearly perfect atomic registration. Electron channeling patterns ( ECPs) generated on a scanning electron microscope (SEM) have been used to characterize as well as optimize the growth process. Electron beam induced current (EBIC) characterization has also been performed, indicating defect densities as low as 5x104/cm2. Secondary ion beam massspectrometry (SIMS) data shows that these layers have reasonable impurity levels within the constraints of our current deposition system. Both n and p-type layers were grown, and p/n diodes have been fabricated.