Growth of Micro-Crystalline Si:H and (Si,Ge):H on Polyimide Substrates Using ECR Deposition Techniques

Research output: Contribution to conferencePaper

Abstract

We report on the growth of good quality micro-crystalline Si:H and (Si,Ge):H films on polymide substrates using a remote plasma ECR deposition technique. We find that under conditions that lead to significant ion bombardment of the substrate, the films are microcrystalline even at relatively low deposition temperatures of about 250 degrees C. A critical factor in inducing micro-crystallinity inthe presence of a metal coating layer on polyimide. In the absence of such a coating, the films are amorphous, probably because the uncoated polyimide substrate charges up and prevents any further ion bombardment. The quality of the films was measured using both Raman spectroscopy and by studying the activation energy and low-energy absorption coefficient of the films. The sub gap absorptioncoefficient was found to follow the crystalline Si absorption curve quite well. The addition of germane to the gas phase shifted the absorption curve to smaller energies.
Original languageAmerican English
Pages409-413
Number of pages5
StatePublished - 1997
EventAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California
Duration: 31 Mar 19974 Apr 1997

Conference

ConferenceAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
CitySan Francisco, California
Period31/03/974/04/97

Bibliographical note

Work performed by Iowa State University, Ames, Iowa

NREL Publication Number

  • NREL/CP-520-24553

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