Growth of Micro-Crystalline Si:H and (Si,Ge):H on Polyimide Substrates Using ECR Deposition Techniques

    Research output: Contribution to conferencePaper

    Abstract

    We report on the growth of good quality micro-crystalline Si:H and (Si,Ge):H films on polymide substrates using a remote plasma ECR deposition technique. We find that under conditions that lead to significant ion bombardment of the substrate, the films are microcrystalline even at relatively low deposition temperatures of about 250 degrees C. A critical factor in inducing micro-crystallinity inthe presence of a metal coating layer on polyimide. In the absence of such a coating, the films are amorphous, probably because the uncoated polyimide substrate charges up and prevents any further ion bombardment. The quality of the films was measured using both Raman spectroscopy and by studying the activation energy and low-energy absorption coefficient of the films. The sub gap absorptioncoefficient was found to follow the crystalline Si absorption curve quite well. The addition of germane to the gas phase shifted the absorption curve to smaller energies.
    Original languageAmerican English
    Pages409-413
    Number of pages5
    StatePublished - 1997
    EventAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California
    Duration: 31 Mar 19974 Apr 1997

    Conference

    ConferenceAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
    CitySan Francisco, California
    Period31/03/974/04/97

    Bibliographical note

    Work performed by Iowa State University, Ames, Iowa

    NREL Publication Number

    • NREL/CP-520-24553

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