Growth of Semiconductor Materials by Hydride Vapor Phase Epitaxy Using an External Aluminum Chloride Generator

Wondwosen Metaferia; Kevin Schulte; Aaron Ptak; John Simon

Growth of Semiconductor Materials by Hydride Vapor Phase Epitaxy Using an External Aluminum Chloride Generator

Wondwosen Metaferia (Inventor)
, Kevin Schulte (Inventor)
, Aaron Ptak (Inventor)
, John Simon (Inventor)

National Laboratory of the Rockies

Research output: Patent

Abstract

Disclosed herein is the controlled epitaxy of Al.sub.xGa.sub.1-xAs, Al.sub.xIn.sub.1-xP, and Al.sub.xGa.sub.yIn.sub.1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl.sub.3 generator.

Original language	American English
Patent number	12,540,417 B2
Filing date	3/02/26
State	Published - 2026

NLR Publication Number

NLR/PT-5900-99169

Keywords

deposition process
hydride vapor phase epitaxy (HVPE)
optoelectronic device

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@misc{0f3ec7341ccc49a689f2c035c431a302,

title = "Growth of Semiconductor Materials by Hydride Vapor Phase Epitaxy Using an External Aluminum Chloride Generator",

abstract = "Disclosed herein is the controlled epitaxy of Al.sub.xGa.sub.1-xAs, Al.sub.xIn.sub.1-xP, and Al.sub.xGa.sub.yIn.sub.1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl.sub.3 generator.",

keywords = "deposition process, hydride vapor phase epitaxy (HVPE), optoelectronic device",

author = "Wondwosen Metaferia and Kevin Schulte and Aaron Ptak and John Simon",

year = "2026",

language = "American English",

publisher = "National Renewable Energy Laboratory (NREL)",

address = "United States",

type = "Patent",

note = "12,540,417 B2",

}

TY - PAT

T1 - Growth of Semiconductor Materials by Hydride Vapor Phase Epitaxy Using an External Aluminum Chloride Generator

AU - Metaferia, Wondwosen

AU - Schulte, Kevin

AU - Ptak, Aaron

AU - Simon, John

PY - 2026

Y1 - 2026

N2 - Disclosed herein is the controlled epitaxy of Al.sub.xGa.sub.1-xAs, Al.sub.xIn.sub.1-xP, and Al.sub.xGa.sub.yIn.sub.1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl.sub.3 generator.

AB - Disclosed herein is the controlled epitaxy of Al.sub.xGa.sub.1-xAs, Al.sub.xIn.sub.1-xP, and Al.sub.xGa.sub.yIn.sub.1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl.sub.3 generator.

KW - deposition process

KW - hydride vapor phase epitaxy (HVPE)

KW - optoelectronic device

M3 - Patent

M1 - 12,540,417 B2

Y2 - 2026/02/03

PB - National Renewable Energy Laboratory (NREL)

ER -

Growth of Semiconductor Materials by Hydride Vapor Phase Epitaxy Using an External Aluminum Chloride Generator

Abstract

NLR Publication Number

Keywords

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