H Diffusion for Impurity and Defect Passivation: A Physical Model for Solar Cell Processing; Preprint

    Research output: Contribution to conferencePaper

    Abstract

    We propose a physical model for diffusion of H in Si containing impurities and defects. The diffusion occurs via several parallel mechanisms, involving complex formation (trapping) and dissociation (detrapping) at impurities and defects, hopping in lattice interstitial sites, and charge-state conversion. The role of bulk and process-induced traps is considered to explain observations from plasma,ion implantation, and PECVD-nitridation processes.
    Original languageAmerican English
    Number of pages8
    StatePublished - 2002
    Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
    Duration: 20 May 200224 May 2002

    Conference

    Conference29th IEEE PV Specialists Conference
    CityNew Orleans, Louisiana
    Period20/05/0224/05/02

    Bibliographical note

    Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

    NREL Publication Number

    • NREL/CP-520-31396

    Keywords

    • defects
    • H diffusion
    • impurities
    • nitridation
    • optimum passivation
    • PV
    • solar cell processing
    • traps

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