H Diffusion for Impurity and Defect Passivation: A Physical Model for Solar Cell Processing; Preprint

Research output: Contribution to conferencePaper

Abstract

We propose a physical model for diffusion of H in Si containing impurities and defects. The diffusion occurs via several parallel mechanisms, involving complex formation (trapping) and dissociation (detrapping) at impurities and defects, hopping in lattice interstitial sites, and charge-state conversion. The role of bulk and process-induced traps is considered to explain observations from plasma,ion implantation, and PECVD-nitridation processes.
Original languageAmerican English
Number of pages8
StatePublished - 2002
Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
Duration: 20 May 200224 May 2002

Conference

Conference29th IEEE PV Specialists Conference
CityNew Orleans, Louisiana
Period20/05/0224/05/02

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

NREL Publication Number

  • NREL/CP-520-31396

Keywords

  • defects
  • H diffusion
  • impurities
  • nitridation
  • optimum passivation
  • PV
  • solar cell processing
  • traps

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