H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers

A. H. Mahan; R. C. Reedy; E. Iwaniczko; Q. Wang; B. P. Nelson; Y. Xu; A. C. Gallagher; H. M. Branz; R. S. Crandall; J. Yang; S. Guha

H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers

A. H. Mahan, R. C. Reedy, E. Iwaniczko, Q. Wang, B. P. Nelson, Y. Xu, A. C. Gallagher, H. M. Branz, R. S. Crandall, J. Yang, S. Guha

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

19 Scopus Citations

Abstract

Hydrogen out-diffusion from the n/i interface region plays a major role in controlling the fill factor (FF) and resultant efficiency of n-i-p a-Si:H devices, with the i-layer deposited at high substrate temperatures by the hot wire technique. Modeling calculations show that a thin, highly defective layer at this interface results in sharply lower device FFs due to the large voltage drops across the defective layer. Increasing the H content, either in the n-layer or an intrinsic low temperature buffer layer with effective thickness could minimize out-diffusion, yielding nearly flat H profiles and much improved device perfomance.

Original language	American English
Pages	119-124
Number of pages	6
State	Published - 1999
Event	Proceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA Duration: 14 Apr 1998 → 17 Apr 1998

Conference

Conference	Proceedings of the 1998 MRS Spring Meeting
City	San Francisco, CA, USA
Period	14/04/98 → 17/04/98

NREL Publication Number

NREL/CP-520-24614

Cite this

@conference{a5cf367dc8b247b3bcf64534ba74614e,

title = "H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers",

abstract = "Hydrogen out-diffusion from the n/i interface region plays a major role in controlling the fill factor (FF) and resultant efficiency of n-i-p a-Si:H devices, with the i-layer deposited at high substrate temperatures by the hot wire technique. Modeling calculations show that a thin, highly defective layer at this interface results in sharply lower device FFs due to the large voltage drops across the defective layer. Increasing the H content, either in the n-layer or an intrinsic low temperature buffer layer with effective thickness could minimize out-diffusion, yielding nearly flat H profiles and much improved device perfomance.",

author = "Mahan, {A. H.} and Reedy, {R. C.} and E. Iwaniczko and Q. Wang and Nelson, {B. P.} and Y. Xu and Gallagher, {A. C.} and Branz, {H. M.} and Crandall, {R. S.} and J. Yang and S. Guha",

year = "1999",

language = "American English",

pages = "119--124",

note = "Proceedings of the 1998 MRS Spring Meeting ; Conference date: 14-04-1998 Through 17-04-1998",

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TY - CONF

T1 - H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers

AU - Mahan, A. H.

AU - Reedy, R. C.

AU - Iwaniczko, E.

AU - Wang, Q.

AU - Nelson, B. P.

AU - Xu, Y.

AU - Gallagher, A. C.

AU - Branz, H. M.

AU - Crandall, R. S.

AU - Yang, J.

AU - Guha, S.

PY - 1999

Y1 - 1999

N2 - Hydrogen out-diffusion from the n/i interface region plays a major role in controlling the fill factor (FF) and resultant efficiency of n-i-p a-Si:H devices, with the i-layer deposited at high substrate temperatures by the hot wire technique. Modeling calculations show that a thin, highly defective layer at this interface results in sharply lower device FFs due to the large voltage drops across the defective layer. Increasing the H content, either in the n-layer or an intrinsic low temperature buffer layer with effective thickness could minimize out-diffusion, yielding nearly flat H profiles and much improved device perfomance.

AB - Hydrogen out-diffusion from the n/i interface region plays a major role in controlling the fill factor (FF) and resultant efficiency of n-i-p a-Si:H devices, with the i-layer deposited at high substrate temperatures by the hot wire technique. Modeling calculations show that a thin, highly defective layer at this interface results in sharply lower device FFs due to the large voltage drops across the defective layer. Increasing the H content, either in the n-layer or an intrinsic low temperature buffer layer with effective thickness could minimize out-diffusion, yielding nearly flat H profiles and much improved device perfomance.

UR - http://www.scopus.com/inward/record.url?scp=0032675558&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032675558

SP - 119

EP - 124

T2 - Proceedings of the 1998 MRS Spring Meeting

Y2 - 14 April 1998 through 17 April 1998

ER -

H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers

Abstract

Conference

NREL Publication Number

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