Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications

Ke Wang; Dihao Ma; Boxue Hu; Jin Wang; Akanksha Singh; Barry Mather

doi:10.1109/WiPDA49284.2021.9645106

Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications

Ke Wang, Dihao Ma, Boxue Hu, Jin Wang, Akanksha Singh, Barry Mather

Power Systems Engineering

The Ohio State University

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/μs common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.

Original language	American English
Pages	339-344
Number of pages	6
DOIs	https://doi.org/10.1109/WiPDA49284.2021.9645106 https://doi.org/10.1109/WiPDA49284.2021.9645106
State	Published - 2021
Event	8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Virtual, Online, United States Duration: 7 Nov 2021 → 11 Nov 2021

Conference

Conference	8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021
Country/Territory	United States
City	Virtual, Online
Period	7/11/21 → 11/11/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

NREL/CP-5D00-80884

Keywords

Auxiliary power supply
Busbar
Gate driver
Modular multilevel converter
SiC MOSFET

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Wang, K., Ma, D., Hu, B., Wang, J., Singh, A., & Mather, B. (2021). Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications. 339-344. Paper presented at 8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021, Virtual, Online, United States. https://doi.org/10.1109/WiPDA49284.2021.9645106, https://doi.org/10.1109/WiPDA49284.2021.9645106

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title = "Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications",

abstract = "This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/μs common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.",

keywords = "Auxiliary power supply, Busbar, Gate driver, Modular multilevel converter, SiC MOSFET",

author = "Ke Wang and Dihao Ma and Boxue Hu and Jin Wang and Akanksha Singh and Barry Mather",

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year = "2021",

doi = "10.1109/WiPDA49284.2021.9645106",

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Wang, K, Ma, D, Hu, B, Wang, J, Singh, A & Mather, B 2021, 'Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications', Paper presented at 8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021, Virtual, Online, United States, 7/11/21 - 11/11/21 pp. 339-344. https://doi.org/10.1109/WiPDA49284.2021.9645106, https://doi.org/10.1109/WiPDA49284.2021.9645106

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AU - Ma, Dihao

AU - Hu, Boxue

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AU - Singh, Akanksha

AU - Mather, Barry

PY - 2021

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N2 - This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/μs common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.

AB - This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/μs common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.

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KW - Busbar

KW - Gate driver

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Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications

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Keywords

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