HCl Vapor Post-Deposition Heat Treatment of CdTe/CdS Films

doi:10.1109/PVSC.1996.564303

HCl Vapor Post-Deposition Heat Treatment of CdTe/CdS Films

Research output: Contribution to conference › Paper

Abstract

Data on the structural and optical properties and cell performance of thermally evaporated CdTe/CdS films are presented as functions of the HCL concentration and temperature of a post-depositon heat treatment. The degree of preferred (111) orientation decreased while the grain size of the CdTe films increased with increasing HCL concentration and temperature. The sulfer content of a CdTe/sub1-x/S/sub x/ layer also increased with HCL concentration and temperature to a maximum value of~2%. Cell performance improved over as-deposited values to~8% efficiency. Experimental difficulties associated with the use of hydrochloric acid and with oxygen in the anneal ambient are discussed.

Original language	American English
Pages	1013-1016
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564303
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by the University of Delaware, Newark, Deleware

NREL Publication Number

NREL/CP-22437

Access to Document

10.1109/PVSC.1996.564303

Cite this

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title = "HCl Vapor Post-Deposition Heat Treatment of CdTe/CdS Films",

abstract = "Data on the structural and optical properties and cell performance of thermally evaporated CdTe/CdS films are presented as functions of the HCL concentration and temperature of a post-depositon heat treatment. The degree of preferred (111) orientation decreased while the grain size of the CdTe films increased with increasing HCL concentration and temperature. The sulfer content of a CdTe/sub1-x/S/sub x/ layer also increased with HCL concentration and temperature to a maximum value of~2%. Cell performance improved over as-deposited values to~8% efficiency. Experimental difficulties associated with the use of hydrochloric acid and with oxygen in the anneal ambient are discussed.",

author = "NREL",

note = "Work performed by the University of Delaware, Newark, Deleware; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564303",

language = "American English",

pages = "1013--1016",

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T1 - HCl Vapor Post-Deposition Heat Treatment of CdTe/CdS Films

AU - NREL, null

N1 - Work performed by the University of Delaware, Newark, Deleware

PY - 1996

Y1 - 1996

N2 - Data on the structural and optical properties and cell performance of thermally evaporated CdTe/CdS films are presented as functions of the HCL concentration and temperature of a post-depositon heat treatment. The degree of preferred (111) orientation decreased while the grain size of the CdTe films increased with increasing HCL concentration and temperature. The sulfer content of a CdTe/sub1-x/S/sub x/ layer also increased with HCL concentration and temperature to a maximum value of~2%. Cell performance improved over as-deposited values to~8% efficiency. Experimental difficulties associated with the use of hydrochloric acid and with oxygen in the anneal ambient are discussed.

AB - Data on the structural and optical properties and cell performance of thermally evaporated CdTe/CdS films are presented as functions of the HCL concentration and temperature of a post-depositon heat treatment. The degree of preferred (111) orientation decreased while the grain size of the CdTe films increased with increasing HCL concentration and temperature. The sulfer content of a CdTe/sub1-x/S/sub x/ layer also increased with HCL concentration and temperature to a maximum value of~2%. Cell performance improved over as-deposited values to~8% efficiency. Experimental difficulties associated with the use of hydrochloric acid and with oxygen in the anneal ambient are discussed.

U2 - 10.1109/PVSC.1996.564303

DO - 10.1109/PVSC.1996.564303

M3 - Paper

SP - 1013

EP - 1016

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

HCl Vapor Post-Deposition Heat Treatment of CdTe/CdS Films

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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Cite this