Heteroepitaxial Growth of CZTS

Steven Harvey; Craig Perkins; Helio Moutinho; Matthew Young; Glenn Teeter; Samual Wilson

doi:10.1109/PVSC.2014.6925396

Heteroepitaxial Growth of CZTS

Steven Harvey, Craig Perkins, Helio Moutinho, Matthew Young, Glenn Teeter, Samual Wilson

Materials Science

University of Florida

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

A summary of preparation methods of various substrates suitable for the epitaxial growth of copper zinc tin sulfide (CZTS) via molecular beam epitaxy (MBE) is presented. Substrates evaluated include silicon (various orientations), ZnS(110), Al₂O₃(0001), and gallium phosphide (GaP) (100). An overview of the techniques used to prepare a high-quality, epi-ready surface for each substrate is covered, with special attention given to the limitations presented by CZTS MBE, namely the stability of surfaces with respect to sulfur vapor. The quality of the substrates prior to growth has been assessed by in-situ reflection high-energy electron diffraction (RHEED) and photoemission techniques. ZnS epitaxial growth was attempted on all substrates because ZnS is viewed as a simplified model system for CZTS. ZnS epitaxial quality was assessed using RHEED during growth and via electron backscatter diffraction (EBSD) post-growth.

Original language	American English
Pages	2338-2342
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2014.6925396 https://doi.org/10.1109/PVSC.2014.6925396
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5K00-61310

Keywords

CZTS
CZTSe
epitaxial
epitaxy
MBE
surface preparation

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title = "Heteroepitaxial Growth of CZTS",

abstract = "A summary of preparation methods of various substrates suitable for the epitaxial growth of copper zinc tin sulfide (CZTS) via molecular beam epitaxy (MBE) is presented. Substrates evaluated include silicon (various orientations), ZnS(110), Al2O3(0001), and gallium phosphide (GaP) (100). An overview of the techniques used to prepare a high-quality, epi-ready surface for each substrate is covered, with special attention given to the limitations presented by CZTS MBE, namely the stability of surfaces with respect to sulfur vapor. The quality of the substrates prior to growth has been assessed by in-situ reflection high-energy electron diffraction (RHEED) and photoemission techniques. ZnS epitaxial growth was attempted on all substrates because ZnS is viewed as a simplified model system for CZTS. ZnS epitaxial quality was assessed using RHEED during growth and via electron backscatter diffraction (EBSD) post-growth.",

keywords = "CZTS, CZTSe, epitaxial, epitaxy, MBE, surface preparation",

author = "Steven Harvey and Craig Perkins and Helio Moutinho and Matthew Young and Glenn Teeter and Samual Wilson",

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doi = "10.1109/PVSC.2014.6925396",

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AU - Harvey, Steven

AU - Perkins, Craig

AU - Moutinho, Helio

AU - Young, Matthew

AU - Teeter, Glenn

AU - Wilson, Samual

PY - 2014/10/15

Y1 - 2014/10/15

N2 - A summary of preparation methods of various substrates suitable for the epitaxial growth of copper zinc tin sulfide (CZTS) via molecular beam epitaxy (MBE) is presented. Substrates evaluated include silicon (various orientations), ZnS(110), Al2O3(0001), and gallium phosphide (GaP) (100). An overview of the techniques used to prepare a high-quality, epi-ready surface for each substrate is covered, with special attention given to the limitations presented by CZTS MBE, namely the stability of surfaces with respect to sulfur vapor. The quality of the substrates prior to growth has been assessed by in-situ reflection high-energy electron diffraction (RHEED) and photoemission techniques. ZnS epitaxial growth was attempted on all substrates because ZnS is viewed as a simplified model system for CZTS. ZnS epitaxial quality was assessed using RHEED during growth and via electron backscatter diffraction (EBSD) post-growth.

AB - A summary of preparation methods of various substrates suitable for the epitaxial growth of copper zinc tin sulfide (CZTS) via molecular beam epitaxy (MBE) is presented. Substrates evaluated include silicon (various orientations), ZnS(110), Al2O3(0001), and gallium phosphide (GaP) (100). An overview of the techniques used to prepare a high-quality, epi-ready surface for each substrate is covered, with special attention given to the limitations presented by CZTS MBE, namely the stability of surfaces with respect to sulfur vapor. The quality of the substrates prior to growth has been assessed by in-situ reflection high-energy electron diffraction (RHEED) and photoemission techniques. ZnS epitaxial growth was attempted on all substrates because ZnS is viewed as a simplified model system for CZTS. ZnS epitaxial quality was assessed using RHEED during growth and via electron backscatter diffraction (EBSD) post-growth.

KW - CZTS

KW - CZTSe

KW - epitaxial

KW - epitaxy

KW - MBE

KW - surface preparation

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DO - 10.1109/PVSC.2014.6925396

M3 - Paper

AN - SCOPUS:84912101464

SP - 2338

EP - 2342

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Heteroepitaxial Growth of CZTS

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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