Heteroepitaxial Growth of CZTS

Steven Harvey, Craig Perkins, Helio Moutinho, Matthew Young, Glenn Teeter, Samual Wilson

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations


A summary of preparation methods of various substrates suitable for the epitaxial growth of copper zinc tin sulfide (CZTS) via molecular beam epitaxy (MBE) is presented. Substrates evaluated include silicon (various orientations), ZnS(110), Al2O3(0001), and gallium phosphide (GaP) (100). An overview of the techniques used to prepare a high-quality, epi-ready surface for each substrate is covered, with special attention given to the limitations presented by CZTS MBE, namely the stability of surfaces with respect to sulfur vapor. The quality of the substrates prior to growth has been assessed by in-situ reflection high-energy electron diffraction (RHEED) and photoemission techniques. ZnS epitaxial growth was attempted on all substrates because ZnS is viewed as a simplified model system for CZTS. ZnS epitaxial quality was assessed using RHEED during growth and via electron backscatter diffraction (EBSD) post-growth.

Original languageAmerican English
Number of pages5
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014


Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5K00-61310


  • CZTS
  • CZTSe
  • epitaxial
  • epitaxy
  • MBE
  • surface preparation


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