Heteroepitaxial Integration of ZnGeN2 on GaN Buffers Using Molecular Beam Epitaxy

Marshall Tellekamp, Celeste Melamed, Andrew Norman, Adele Tamboli

Research output: Contribution to journalArticlepeer-review

22 Scopus Citations


Recently theorized hybrid II-IV-N2/III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few epitaxial studies of II-IV-N2 materials. In this work, we present heteroepitaxial ZnGeN2 grown on GaN buffers and AlN templates. We demonstrate that a GaN nucleating surface is crucial for increasing the ZnGeN2 crystallization rate to combat Zn desorption, extending the stoichiometric growth window from 215 °C on AlN to 500 °C on GaN buffers. Structural characterization reveals well-crystallized films with threading dislocations extending from the GaN buffer. These films have a critical thickness for relaxation of 20-25 nm as determined by reflection high energy electron diffraction (RHEED) and cross-sectional scanning electron microscopy (SEM). The films exhibit a cation-disordered wurtzite structure, with lattice constants a = 3.216 ± 0.004 Å and c = 5.215 ± 0.005 Å determined by RHEED and X-ray diffraction (XRD). This work demonstrates a significant step toward the development of hybrid ZnGeN2-GaN integrated devices.

Original languageAmerican English
Pages (from-to)1868-1875
Number of pages8
JournalCrystal Growth and Design
Issue number3
StatePublished - 4 Mar 2020

Bibliographical note

Publisher Copyright:
© 2020 American Chemical Society.

NREL Publication Number

  • NREL/JA-5K00-75519


  • II-IV-N2
  • molecular beam epitaxy
  • ZnGeN2


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