Heterointerface Stability in GaAs-on-Si Grown by Metalorganic Chemical Vapor Deposition

Research output: Contribution to journal › Article

Work performed by AT&T Bell Laboratories; Murray Hill, New Jersey and Spire Corporation, Bedford, Massachusetts

NREL Publication Number

@article{5ccd75ab82a24b8f8da9079fc3c1e950,

title = "Heterointerface Stability in GaAs-on-Si Grown by Metalorganic Chemical Vapor Deposition",

author = "NREL",

note = "Work performed by AT&T Bell Laboratories; Murray Hill, New Jersey and Spire Corporation, Bedford, Massachusetts",

year = "1987",

doi = "10.1063/1.98333",

language = "American English",

volume = "51",

pages = "682--684",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Heterointerface Stability in GaAs-on-Si Grown by Metalorganic Chemical Vapor Deposition

AU - NREL, null

N1 - Work performed by AT&T Bell Laboratories; Murray Hill, New Jersey and Spire Corporation, Bedford, Massachusetts

PY - 1987

Y1 - 1987

U2 - 10.1063/1.98333

DO - 10.1063/1.98333

M3 - Article

SN - 0003-6951

VL - 51

SP - 682

EP - 684

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -