Heterointerface Stability in GaAs-on-Si Grown by Metalorganic Chemical Vapor Deposition

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)682-684
    Number of pages3
    JournalApplied Physics Letters
    Issue number9
    StatePublished - 1987

    Bibliographical note

    Work performed by AT&T Bell Laboratories; Murray Hill, New Jersey and Spire Corporation, Bedford, Massachusetts

    NREL Publication Number

    • ACNR/JA-9551

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