Heterojunction Formation in (CdZn)S/CuInSe2 Ternary Solar Cells

Richard K. Ahrenkiel; L. L. Kazmerski; R. J. Matson; C. Osterwald; T. P. Massopust; R. A. Mickelsen; W. S. Chen

doi:10.1063/1.94474

Heterojunction Formation in (CdZn)S/CuInSe2 Ternary Solar Cells

Richard K. Ahrenkiel
, L. L. Kazmerski
, R. J. Matson
, C. Osterwald
, T. P. Massopust
, R. A. Mickelsen
, W. S. Chen

Materials Science

Research output: Contribution to journal › Article › peer-review

19 Scopus Citations

Abstract

The electrical properties of (CdZn)S/CuInSe₂ solar cells have been investigated by combining electron beam induced current measurements and capacitance-voltage measurements on the same device. In the as-grown device, the CuInSe₂ is lightly doped n type. After baking to about 225°C in vacuum, the CuInSe₂ converts to p type forming the heterojunction. Oxygen does not appear to be necessary for type conversion to occur.

Original language	American English
Pages (from-to)	658-660
Number of pages	3
Journal	Applied Physics Letters
Volume	43
Issue number	7
DOIs	https://doi.org/10.1063/1.94474 https://doi.org/10.1063/1.94474
State	Published - 1983

NLR Publication Number

ACNR/JA-213-3580

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title = "Heterojunction Formation in (CdZn)S/CuInSe2 Ternary Solar Cells",

abstract = "The electrical properties of (CdZn)S/CuInSe2 solar cells have been investigated by combining electron beam induced current measurements and capacitance-voltage measurements on the same device. In the as-grown device, the CuInSe2 is lightly doped n type. After baking to about 225°C in vacuum, the CuInSe2 converts to p type forming the heterojunction. Oxygen does not appear to be necessary for type conversion to occur.",

author = "Ahrenkiel, \{Richard K.\} and Kazmerski, \{L. L.\} and Matson, \{R. J.\} and C. Osterwald and Massopust, \{T. P.\} and Mickelsen, \{R. A.\} and Chen, \{W. S.\}",

year = "1983",

doi = "10.1063/1.94474",

language = "American English",

volume = "43",

pages = "658--660",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Heterojunction Formation in (CdZn)S/CuInSe2 Ternary Solar Cells

AU - Ahrenkiel, Richard K.

AU - Kazmerski, L. L.

AU - Matson, R. J.

AU - Osterwald, C.

AU - Massopust, T. P.

AU - Mickelsen, R. A.

AU - Chen, W. S.

PY - 1983

Y1 - 1983

N2 - The electrical properties of (CdZn)S/CuInSe2 solar cells have been investigated by combining electron beam induced current measurements and capacitance-voltage measurements on the same device. In the as-grown device, the CuInSe2 is lightly doped n type. After baking to about 225°C in vacuum, the CuInSe2 converts to p type forming the heterojunction. Oxygen does not appear to be necessary for type conversion to occur.

AB - The electrical properties of (CdZn)S/CuInSe2 solar cells have been investigated by combining electron beam induced current measurements and capacitance-voltage measurements on the same device. In the as-grown device, the CuInSe2 is lightly doped n type. After baking to about 225°C in vacuum, the CuInSe2 converts to p type forming the heterojunction. Oxygen does not appear to be necessary for type conversion to occur.

UR - https://www.scopus.com/pages/publications/0005843039

U2 - 10.1063/1.94474

DO - 10.1063/1.94474

M3 - Article

AN - SCOPUS:0005843039

SN - 0003-6951

VL - 43

SP - 658

EP - 660

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Heterojunction Formation in (CdZn)S/CuInSe2 Ternary Solar Cells

Abstract

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