Heterojunction Rear Passivated Contact for High Efficiency n-Cz Si Solar Cells

Benjamin G. Lee, William Nemeth, Hao Chih Yuan, Matthew R. Page, Vincenzo Lasalvia, David L. Young, Paul Stradins

Research output: Contribution to conferencePaperpeer-review


We investigate the challenges and potential for high-efficiency n-type Cz Si solar cells having a hybrid structure - a diffused B emitter on the front side, and an amorphous Si heterojunction (SHJ) passivated full-area contact on the rear. This cell design has benefits over comparable high-efficiency geometries such as PERL (passivated emitter rear locally diffused) and SHJ cells with heterojunctions both front and rear. We show that an advantage of the HJ rear contact is excellent passivation of the backside, with measured contact recombination current density J0,b,c < 10 fA/cm2; moreover, compared to PERL, its cell fabrication process is much simpler. Weighed against standard SHJ cells, the diffused front results in less optical loss and no need for a transparent conducting oxide (TCO). We study the contact resistivity of a state-of-the-art SHJ rear contact to the wafer, finding a value of ∼0.3 ohm-cm2; a series of experiments are performed to reduce this value while maintaining potential for high Voc > 700 mV. As an initial demonstration of the concept, we fabricate a hybrid-structure cell having Voc = 671 mV, Jsc = 36.7 mA/cm2, FF = 0.75 and efficiency of 18.5%.

Original languageAmerican English
Number of pages3
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014


Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5J00-61186


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