Hierarchical Transparent Back Contacts for Bifacial CdTe PV

B. Edward Sartor; Teng Zhang; Christopher Muzzillo; Chungho Lee; Ryan Muzzio; Yury Gogotsi; Matthew Reese; Andre Taylor

doi:10.1021/acsenergylett.4c00156

Hierarchical Transparent Back Contacts for Bifacial CdTe PV

B. Edward Sartor, Teng Zhang, Christopher Muzzillo, Chungho Lee, Ryan Muzzio, Yury Gogotsi, Matthew Reese, Andre Taylor

Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

A hierarchical transparent back contact leveraging an AlGaOX passivating layer, Ti3C2TX MXene with a high work function, and a transparent cracked film lithography (CFL) templated nanogrid is demonstrated on copper-free cadmium telluride (CdTe) devices. AlGaOX improves device open-circuit voltage but reduces the fill factor when using a CFL-templated metal contact. Including a Ti3C2TX interlayer improves the fill factor, lowers detrimental Schottky barriers, and enables metallization with CFL by providing transverse conduction into the nanogrid. The bifacial performance of an AlGaOX/Ti3C2TX/CFL gold contact is evaluated, reaching 19.5% frontside efficiency and 2.8% backside efficiency under 1-sun illumination for a copper-free, group-V doped CdTe device. Under dual illumination, device power generation reached 200 W/m2 with 0.1 sun backside illumination.

Original language	American English
Pages (from-to)	1617-1623
Number of pages	7
Journal	ACS Energy Letters
Volume	9
Issue number	4
DOIs	https://doi.org/10.1021/acsenergylett.4c00156
State	Published - 2024

NREL Publication Number

NREL/JA-5K00-89613

Keywords

absorption
electrical conductivity
gold
layers
two dimensional materials

Access to Document

10.1021/acsenergylett.4c00156

https://www.nrel.gov/docs/fy24osti/89613.pdf

Cite this

@article{80811508ed6c405a8f55aca13068b417,

title = "Hierarchical Transparent Back Contacts for Bifacial CdTe PV",

abstract = "A hierarchical transparent back contact leveraging an AlGaOX passivating layer, Ti3C2TX MXene with a high work function, and a transparent cracked film lithography (CFL) templated nanogrid is demonstrated on copper-free cadmium telluride (CdTe) devices. AlGaOX improves device open-circuit voltage but reduces the fill factor when using a CFL-templated metal contact. Including a Ti3C2TX interlayer improves the fill factor, lowers detrimental Schottky barriers, and enables metallization with CFL by providing transverse conduction into the nanogrid. The bifacial performance of an AlGaOX/Ti3C2TX/CFL gold contact is evaluated, reaching 19.5% frontside efficiency and 2.8% backside efficiency under 1-sun illumination for a copper-free, group-V doped CdTe device. Under dual illumination, device power generation reached 200 W/m2 with 0.1 sun backside illumination.",

keywords = "absorption, electrical conductivity, gold, layers, two dimensional materials",

author = "Sartor, {B. Edward} and Teng Zhang and Christopher Muzzillo and Chungho Lee and Ryan Muzzio and Yury Gogotsi and Matthew Reese and Andre Taylor",

year = "2024",

doi = "10.1021/acsenergylett.4c00156",

language = "American English",

volume = "9",

pages = "1617--1623",

journal = "ACS Energy Letters",

issn = "2380-8195",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Hierarchical Transparent Back Contacts for Bifacial CdTe PV

AU - Sartor, B. Edward

AU - Zhang, Teng

AU - Muzzillo, Christopher

AU - Lee, Chungho

AU - Muzzio, Ryan

AU - Gogotsi, Yury

AU - Reese, Matthew

AU - Taylor, Andre

PY - 2024

Y1 - 2024

N2 - A hierarchical transparent back contact leveraging an AlGaOX passivating layer, Ti3C2TX MXene with a high work function, and a transparent cracked film lithography (CFL) templated nanogrid is demonstrated on copper-free cadmium telluride (CdTe) devices. AlGaOX improves device open-circuit voltage but reduces the fill factor when using a CFL-templated metal contact. Including a Ti3C2TX interlayer improves the fill factor, lowers detrimental Schottky barriers, and enables metallization with CFL by providing transverse conduction into the nanogrid. The bifacial performance of an AlGaOX/Ti3C2TX/CFL gold contact is evaluated, reaching 19.5% frontside efficiency and 2.8% backside efficiency under 1-sun illumination for a copper-free, group-V doped CdTe device. Under dual illumination, device power generation reached 200 W/m2 with 0.1 sun backside illumination.

AB - A hierarchical transparent back contact leveraging an AlGaOX passivating layer, Ti3C2TX MXene with a high work function, and a transparent cracked film lithography (CFL) templated nanogrid is demonstrated on copper-free cadmium telluride (CdTe) devices. AlGaOX improves device open-circuit voltage but reduces the fill factor when using a CFL-templated metal contact. Including a Ti3C2TX interlayer improves the fill factor, lowers detrimental Schottky barriers, and enables metallization with CFL by providing transverse conduction into the nanogrid. The bifacial performance of an AlGaOX/Ti3C2TX/CFL gold contact is evaluated, reaching 19.5% frontside efficiency and 2.8% backside efficiency under 1-sun illumination for a copper-free, group-V doped CdTe device. Under dual illumination, device power generation reached 200 W/m2 with 0.1 sun backside illumination.

KW - absorption

KW - electrical conductivity

KW - gold

KW - layers

KW - two dimensional materials

U2 - 10.1021/acsenergylett.4c00156

DO - 10.1021/acsenergylett.4c00156

M3 - Article

SN - 2380-8195

VL - 9

SP - 1617

EP - 1623

JO - ACS Energy Letters

JF - ACS Energy Letters

IS - 4

ER -

Hierarchical Transparent Back Contacts for Bifacial CdTe PV

Abstract

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this