Abstract
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.
| Original language | American English |
|---|---|
| Patent number | 9,543,468 |
| Filing date | 10/01/17 |
| State | Published - 2017 |
NREL Publication Number
- NREL/PT-5K00-70248
Keywords
- GaAs
- layer
- optoelectronics
- substrate