High Bandgap III-V Alloys for High Efficiency Optoelectronics

Kirstin Alberi (Inventor), Mark Wanlass (Inventor), Angelo Mascarenhas (Inventor)

Research output: Patent


High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.
Original languageAmerican English
Patent number9,543,468
Filing date10/01/17
StatePublished - 2017

NREL Publication Number

  • NREL/PT-5K00-70248


  • GaAs
  • layer
  • optoelectronics
  • substrate


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