High-Deposition Rate a-Si:H n-i-p Solar Cells Grown by HWCVD

Brent P. Nelson, Eugene Iwaniczko, A. Harv Mahan, Qi Wang, Yueqin Xu, Richard S. Crandall, Howard M. Branz

Research output: Contribution to journalArticlepeer-review

45 Scopus Citations


We grow hydrogenated amorphous silicon (a-Si:H) solar cells in a device structure denoted as SS/n-i-p/ITO. We grow all the a-Si:H layers by hot-wire chemical vapor deposition (HWCVD) and the indium-tin-oxide (ITO) by reactive evaporation. We are able to grow HWCVD i-layer materials that maintain an AM1.5 photoconductivity-to-dark-conductivity ratio of 105 at deposition rates up to 130 Å/s. We have put these high-deposition rate i-layer materials into SS/n-i-p/ITO devices and light-soaked them for ≥1000 h under AM1.5 conditions. We obtain stabilized solar cell efficiencies of 5.5% at 18 Å/s, 4.8% at 35 Å/s, 4.1% at 83 Å/s and 3.8% at 127 Å/s.

Original languageAmerican English
Pages (from-to)292-297
Number of pages6
JournalThin Solid Films
Issue number1-2
StatePublished - 2001
EventProceedings of the First International Conference on Cat-CVD - Kanazawa, Japan
Duration: 14 Nov 200017 Nov 2000

NREL Publication Number

  • NREL/JA-520-29317


  • Amorphous materials
  • Deposition process
  • Silicon
  • Solar cells


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