High-Deposition Rate a-Si:H n-i-p Solar Cells Grown by HWCVD

Brent P. Nelson; Eugene Iwaniczko; A. Harv Mahan; Qi Wang; Yueqin Xu; Richard S. Crandall; Howard M. Branz

doi:10.1016/S0040-6090(01)01274-3

High-Deposition Rate a-Si:H n-i-p Solar Cells Grown by HWCVD

Brent P. Nelson, Eugene Iwaniczko, A. Harv Mahan, Qi Wang, Yueqin Xu, Richard S. Crandall, Howard M. Branz

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

45 Scopus Citations

Abstract

We grow hydrogenated amorphous silicon (a-Si:H) solar cells in a device structure denoted as SS/n-i-p/ITO. We grow all the a-Si:H layers by hot-wire chemical vapor deposition (HWCVD) and the indium-tin-oxide (ITO) by reactive evaporation. We are able to grow HWCVD i-layer materials that maintain an AM1.5 photoconductivity-to-dark-conductivity ratio of 10⁵ at deposition rates up to 130 Å/s. We have put these high-deposition rate i-layer materials into SS/n-i-p/ITO devices and light-soaked them for ≥1000 h under AM1.5 conditions. We obtain stabilized solar cell efficiencies of 5.5% at 18 Å/s, 4.8% at 35 Å/s, 4.1% at 83 Å/s and 3.8% at 127 Å/s.

Original language	American English
Pages (from-to)	292-297
Number of pages	6
Journal	Thin Solid Films
Volume	395
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(01)01274-3 https://doi.org/10.1016/S0040-6090(01)01274-3
State	Published - 2001
Event	Proceedings of the First International Conference on Cat-CVD - Kanazawa, Japan Duration: 14 Nov 2000 → 17 Nov 2000

NREL Publication Number

NREL/JA-520-29317

Keywords

Amorphous materials
Deposition process
Silicon
Solar cells

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title = "High-Deposition Rate a-Si:H n-i-p Solar Cells Grown by HWCVD",

abstract = "We grow hydrogenated amorphous silicon (a-Si:H) solar cells in a device structure denoted as SS/n-i-p/ITO. We grow all the a-Si:H layers by hot-wire chemical vapor deposition (HWCVD) and the indium-tin-oxide (ITO) by reactive evaporation. We are able to grow HWCVD i-layer materials that maintain an AM1.5 photoconductivity-to-dark-conductivity ratio of 105 at deposition rates up to 130 {\AA}/s. We have put these high-deposition rate i-layer materials into SS/n-i-p/ITO devices and light-soaked them for ≥1000 h under AM1.5 conditions. We obtain stabilized solar cell efficiencies of 5.5% at 18 {\AA}/s, 4.8% at 35 {\AA}/s, 4.1% at 83 {\AA}/s and 3.8% at 127 {\AA}/s.",

keywords = "Amorphous materials, Deposition process, Silicon, Solar cells",

author = "Nelson, {Brent P.} and Eugene Iwaniczko and Mahan, {A. Harv} and Qi Wang and Yueqin Xu and Crandall, {Richard S.} and Branz, {Howard M.}",

year = "2001",

doi = "10.1016/S0040-6090(01)01274-3",

language = "American English",

volume = "395",

pages = "292--297",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

note = "Proceedings of the First International Conference on Cat-CVD ; Conference date: 14-11-2000 Through 17-11-2000",

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TY - JOUR

T1 - High-Deposition Rate a-Si:H n-i-p Solar Cells Grown by HWCVD

AU - Nelson, Brent P.

AU - Iwaniczko, Eugene

AU - Mahan, A. Harv

AU - Wang, Qi

AU - Xu, Yueqin

AU - Crandall, Richard S.

AU - Branz, Howard M.

PY - 2001

Y1 - 2001

N2 - We grow hydrogenated amorphous silicon (a-Si:H) solar cells in a device structure denoted as SS/n-i-p/ITO. We grow all the a-Si:H layers by hot-wire chemical vapor deposition (HWCVD) and the indium-tin-oxide (ITO) by reactive evaporation. We are able to grow HWCVD i-layer materials that maintain an AM1.5 photoconductivity-to-dark-conductivity ratio of 105 at deposition rates up to 130 Å/s. We have put these high-deposition rate i-layer materials into SS/n-i-p/ITO devices and light-soaked them for ≥1000 h under AM1.5 conditions. We obtain stabilized solar cell efficiencies of 5.5% at 18 Å/s, 4.8% at 35 Å/s, 4.1% at 83 Å/s and 3.8% at 127 Å/s.

AB - We grow hydrogenated amorphous silicon (a-Si:H) solar cells in a device structure denoted as SS/n-i-p/ITO. We grow all the a-Si:H layers by hot-wire chemical vapor deposition (HWCVD) and the indium-tin-oxide (ITO) by reactive evaporation. We are able to grow HWCVD i-layer materials that maintain an AM1.5 photoconductivity-to-dark-conductivity ratio of 105 at deposition rates up to 130 Å/s. We have put these high-deposition rate i-layer materials into SS/n-i-p/ITO devices and light-soaked them for ≥1000 h under AM1.5 conditions. We obtain stabilized solar cell efficiencies of 5.5% at 18 Å/s, 4.8% at 35 Å/s, 4.1% at 83 Å/s and 3.8% at 127 Å/s.

KW - Amorphous materials

KW - Deposition process

KW - Silicon

KW - Solar cells

UR - http://www.scopus.com/inward/record.url?scp=0035801093&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(01)01274-3

DO - 10.1016/S0040-6090(01)01274-3

M3 - Article

AN - SCOPUS:0035801093

SN - 0040-6090

VL - 395

SP - 292

EP - 297

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the First International Conference on Cat-CVD

Y2 - 14 November 2000 through 17 November 2000

ER -

High-Deposition Rate a-Si:H n-i-p Solar Cells Grown by HWCVD

Abstract

NREL Publication Number

Keywords

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