High Efficiency 1.0-eV GaInAs Bottom Solar Cell for 3-Junction Monolithic Stack

J. C. Schultz; M. E. Klausmeier-Brown; M. Ladle Ristow; M. M. Al-Jassim

High Efficiency 1.0-eV GaInAs Bottom Solar Cell for 3-Junction Monolithic Stack

J. C. Schultz, M. E. Klausmeier-Brown, M. Ladle Ristow, M. M. Al-Jassim

Varian Research Center

Research output: Contribution to conference › Paper › peer-review

6 Scopus Citations

Abstract

High-efficiency 1.0-eV GaInAs cells for ultimate integration into AlGaAs/GaAs/GaInAs 3-junction, 2-terminal monolithic devices are described. An n/p 1.0-eV GaInAs cell has been fabricated with a 4.7% (5.4%) solar conversion efficiency under 1-sun, 25°C, AM0 (AM1.5G) conditions underneath a simulated GaAs cell. While this GaInAs cell had a AM0 J_sc of 14.6 mA/cm², at least 16 mA/cm² is needed to current match the AlGaAs and GaAs upper cells. A recent n-i-p 1.0-eV GaInAs cell achieved a J_sc of 16.0 mA/cm². Progress toward monolithic integration with the AlGaAs/GaAs upper cells is described.

Original language	American English
Pages	148-152
Number of pages	5
State	Published - May 1990
Externally published	Yes
Event	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA Duration: 21 May 1990 → 25 May 1990

Conference

Conference	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)
City	Kissimimee, FL, USA
Period	21/05/90 → 25/05/90

Bibliographical note

Work performed by Device Laboratory, Varian Research Center, Palo Alto, California, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/CP-213-12250

Cite this

@conference{b415be587598453f815efc8ad38caa1d,

title = "High Efficiency 1.0-eV GaInAs Bottom Solar Cell for 3-Junction Monolithic Stack",

abstract = "High-efficiency 1.0-eV GaInAs cells for ultimate integration into AlGaAs/GaAs/GaInAs 3-junction, 2-terminal monolithic devices are described. An n/p 1.0-eV GaInAs cell has been fabricated with a 4.7% (5.4%) solar conversion efficiency under 1-sun, 25°C, AM0 (AM1.5G) conditions underneath a simulated GaAs cell. While this GaInAs cell had a AM0 Jsc of 14.6 mA/cm2, at least 16 mA/cm2 is needed to current match the AlGaAs and GaAs upper cells. A recent n-i-p 1.0-eV GaInAs cell achieved a Jsc of 16.0 mA/cm2. Progress toward monolithic integration with the AlGaAs/GaAs upper cells is described.",

author = "Schultz, {J. C.} and Klausmeier-Brown, {M. E.} and {Ladle Ristow}, M. and Al-Jassim, {M. M.}",

note = "Work performed by Device Laboratory, Varian Research Center, Palo Alto, California, and Solar Energy Research Institute, Golden, Colorado; Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) ; Conference date: 21-05-1990 Through 25-05-1990",

year = "1990",

month = may,

language = "American English",

pages = "148--152",

}

TY - CONF

T1 - High Efficiency 1.0-eV GaInAs Bottom Solar Cell for 3-Junction Monolithic Stack

AU - Schultz, J. C.

AU - Klausmeier-Brown, M. E.

AU - Ladle Ristow, M.

AU - Al-Jassim, M. M.

N1 - Work performed by Device Laboratory, Varian Research Center, Palo Alto, California, and Solar Energy Research Institute, Golden, Colorado

PY - 1990/5

Y1 - 1990/5

N2 - High-efficiency 1.0-eV GaInAs cells for ultimate integration into AlGaAs/GaAs/GaInAs 3-junction, 2-terminal monolithic devices are described. An n/p 1.0-eV GaInAs cell has been fabricated with a 4.7% (5.4%) solar conversion efficiency under 1-sun, 25°C, AM0 (AM1.5G) conditions underneath a simulated GaAs cell. While this GaInAs cell had a AM0 Jsc of 14.6 mA/cm2, at least 16 mA/cm2 is needed to current match the AlGaAs and GaAs upper cells. A recent n-i-p 1.0-eV GaInAs cell achieved a Jsc of 16.0 mA/cm2. Progress toward monolithic integration with the AlGaAs/GaAs upper cells is described.

AB - High-efficiency 1.0-eV GaInAs cells for ultimate integration into AlGaAs/GaAs/GaInAs 3-junction, 2-terminal monolithic devices are described. An n/p 1.0-eV GaInAs cell has been fabricated with a 4.7% (5.4%) solar conversion efficiency under 1-sun, 25°C, AM0 (AM1.5G) conditions underneath a simulated GaAs cell. While this GaInAs cell had a AM0 Jsc of 14.6 mA/cm2, at least 16 mA/cm2 is needed to current match the AlGaAs and GaAs upper cells. A recent n-i-p 1.0-eV GaInAs cell achieved a Jsc of 16.0 mA/cm2. Progress toward monolithic integration with the AlGaAs/GaAs upper cells is described.

UR - http://www.scopus.com/inward/record.url?scp=0025420437&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0025420437

SP - 148

EP - 152

T2 - Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)

Y2 - 21 May 1990 through 25 May 1990

ER -

High Efficiency 1.0-eV GaInAs Bottom Solar Cell for 3-Junction Monolithic Stack

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this