High Efficiency Al0.22Ga0.78As Solar Cells Grown by Molecular Beam Epitaxy

M. R. Melloch, S. P. Tobin, C. Bajgar, A. Keshavarzi, T. B. Stellwag, G. B. Lush, M. S. Lundstrom, K. Emery

Research output: Contribution to journalArticlepeer-review

6 Scopus Citations


The quality of pn junction photodetectors made of Al0.2Ga 0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm2 Al0.22Ga0.78As solar cells fabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al 0.2Ga0.8As solar cell fabricated from MBE material.

Original languageAmerican English
Pages (from-to)52-54
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1990

Bibliographical note

Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana; Spire Corporation, Bedford, Massachusetts; and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

  • ACNR/JA-213-11601


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