Abstract
The quality of pn junction photodetectors made of Al0.2Ga 0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm2 Al0.22Ga0.78As solar cells fabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al 0.2Ga0.8As solar cell fabricated from MBE material.
Original language | American English |
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Pages (from-to) | 52-54 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 57 |
Issue number | 1 |
DOIs | |
State | Published - 1990 |
Bibliographical note
Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana; Spire Corporation, Bedford, Massachusetts; and Solar Energy Research Institute, Golden, ColoradoNREL Publication Number
- ACNR/JA-213-11601