High Efficiency Al0.22Ga0.78As Solar Cells Grown by Molecular Beam Epitaxy

M. R. Melloch; S. P. Tobin; C. Bajgar; A. Keshavarzi; T. B. Stellwag; G. B. Lush; M. S. Lundstrom; K. Emery

doi:10.1063/1.103575

High Efficiency Al0.22Ga0.78As Solar Cells Grown by Molecular Beam Epitaxy

M. R. Melloch
, S. P. Tobin
, C. Bajgar
, A. Keshavarzi
, T. B. Stellwag
, G. B. Lush
, M. S. Lundstrom
, K. Emery

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

7 Scopus Citations

Abstract

The quality of pn junction photodetectors made of Al_0.2Ga _0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm² Al_0.22Ga_0.78As solar cells fabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al _0.2Ga_0.8As solar cell fabricated from MBE material.

Original language	American English
Pages (from-to)	52-54
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	1
DOIs	https://doi.org/10.1063/1.103575 https://doi.org/10.1063/1.103575
State	Published - 1990

Bibliographical note

Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana; Spire Corporation, Bedford, Massachusetts; and Solar Energy Research Institute, Golden, Colorado

NLR Publication Number

ACNR/JA-213-11601

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@article{6c73a1f60b084cd1ba0ec9b874a02048,

title = "High Efficiency Al0.22Ga0.78As Solar Cells Grown by Molecular Beam Epitaxy",

abstract = "The quality of pn junction photodetectors made of Al0.2Ga 0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1\% for 0.25 cm2 Al0.22Ga0.78As solar cells fabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9\% for an Al 0.2Ga0.8As solar cell fabricated from MBE material.",

author = "Melloch, \{M. R.\} and Tobin, \{S. P.\} and C. Bajgar and A. Keshavarzi and Stellwag, \{T. B.\} and Lush, \{G. B.\} and Lundstrom, \{M. S.\} and K. Emery",

note = "Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana; Spire Corporation, Bedford, Massachusetts; and Solar Energy Research Institute, Golden, Colorado",

year = "1990",

doi = "10.1063/1.103575",

language = "American English",

volume = "57",

pages = "52--54",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - High Efficiency Al0.22Ga0.78As Solar Cells Grown by Molecular Beam Epitaxy

AU - Melloch, M. R.

AU - Tobin, S. P.

AU - Bajgar, C.

AU - Keshavarzi, A.

AU - Stellwag, T. B.

AU - Lush, G. B.

AU - Lundstrom, M. S.

AU - Emery, K.

N1 - Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana; Spire Corporation, Bedford, Massachusetts; and Solar Energy Research Institute, Golden, Colorado

PY - 1990

Y1 - 1990

N2 - The quality of pn junction photodetectors made of Al0.2Ga 0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm2 Al0.22Ga0.78As solar cells fabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al 0.2Ga0.8As solar cell fabricated from MBE material.

AB - The quality of pn junction photodetectors made of Al0.2Ga 0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm2 Al0.22Ga0.78As solar cells fabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al 0.2Ga0.8As solar cell fabricated from MBE material.

UR - https://www.scopus.com/pages/publications/36549102146

U2 - 10.1063/1.103575

DO - 10.1063/1.103575

M3 - Article

AN - SCOPUS:36549102146

SN - 0003-6951

VL - 57

SP - 52

EP - 54

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

High Efficiency Al0.22Ga0.78As Solar Cells Grown by Molecular Beam Epitaxy

Abstract

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