Abstract
The nature of the interface between CuInGaSe2 (CIGS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn- containing solutions in the presence of ammonium hydroxide sets up an interfacial reaction with the possibility of an ion exchange occurring between Cd and Cu. The characteristics of devices made in this manner suggest thatthe reaction generates a thin, n-doped region in the absorber. We suggest that this aspect might be more important than the CdS layer in the formation of the junction. It is quite possible that the CdS/CuInSe2 device is a buried, shallow junction with a CdS window layer, rather than a heterojunction between CdS and CIGS. We use these ideas to develop methods for fabricating diodes without CdS orCd.
| Original language | American English |
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| Number of pages | 6 |
| State | Published - 1998 |
| Event | 2nd World Conference on Photovoltaic Solar Energy Conversion - Vienna, Austria Duration: 6 Jul 1998 → 10 Jul 1998 |
Conference
| Conference | 2nd World Conference on Photovoltaic Solar Energy Conversion |
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| City | Vienna, Austria |
| Period | 6/07/98 → 10/07/98 |
NREL Publication Number
- NREL/CP-520-23898