High-Efficiency GaAs and AlGaAs Solar Cells Grown by Molecular Beam Epitaxy

M. R. Melloch; S. P. Tobin; C. Bajgar; T. B. Stellwag; A. Keshavarzi; M. S. Lundstorm; K. Emery

High-Efficiency GaAs and AlGaAs Solar Cells Grown by Molecular Beam Epitaxy

M. R. Melloch, S. P. Tobin, C. Bajgar, T. B. Stellwag, A. Keshavarzi, M. S. Lundstorm, K. Emery

Purdue University

Research output: Contribution to conference › Paper › peer-review

9 Scopus Citations

Abstract

One-sun AM1.5 efficiencies of 23.8% for 0.25-cm²-area GaAs solar cells fabricated from molecular beam epitaxy (MBE) material were obtained. The performance is comparable to that obtained with metalorganic chemical vapor deposited (MOCVD) material. One-sun AM1.5 efficiencies of 16.1% for 0.25-cm²-area Al_0.22Ga_0.78As solar cells fabricated from MBE material were also obtained. This efficiency is 3.2% higher than the previously best reported efficiency of 12.9% for an Al_0.2Ga_0.8As solar cell fabricated from MBE material.

Original language	American English
Pages	163-167
Number of pages	5
State	Published - May 1990
Externally published	Yes
Event	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA Duration: 21 May 1990 → 25 May 1990

Conference

Conference	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)
City	Kissimimee, FL, USA
Period	21/05/90 → 25/05/90

Bibliographical note

Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana; Spire Corporation, Bedford, Massachusetts; and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/CP-213-12251

Cite this

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title = "High-Efficiency GaAs and AlGaAs Solar Cells Grown by Molecular Beam Epitaxy",

abstract = "One-sun AM1.5 efficiencies of 23.8% for 0.25-cm2-area GaAs solar cells fabricated from molecular beam epitaxy (MBE) material were obtained. The performance is comparable to that obtained with metalorganic chemical vapor deposited (MOCVD) material. One-sun AM1.5 efficiencies of 16.1% for 0.25-cm2-area Al0.22Ga0.78As solar cells fabricated from MBE material were also obtained. This efficiency is 3.2% higher than the previously best reported efficiency of 12.9% for an Al0.2Ga0.8As solar cell fabricated from MBE material.",

author = "Melloch, {M. R.} and Tobin, {S. P.} and C. Bajgar and Stellwag, {T. B.} and A. Keshavarzi and Lundstorm, {M. S.} and K. Emery",

note = "Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana; Spire Corporation, Bedford, Massachusetts; and Solar Energy Research Institute, Golden, Colorado; Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) ; Conference date: 21-05-1990 Through 25-05-1990",

year = "1990",

month = may,

language = "American English",

pages = "163--167",

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TY - CONF

T1 - High-Efficiency GaAs and AlGaAs Solar Cells Grown by Molecular Beam Epitaxy

AU - Melloch, M. R.

AU - Tobin, S. P.

AU - Bajgar, C.

AU - Stellwag, T. B.

AU - Keshavarzi, A.

AU - Lundstorm, M. S.

AU - Emery, K.

N1 - Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana; Spire Corporation, Bedford, Massachusetts; and Solar Energy Research Institute, Golden, Colorado

PY - 1990/5

Y1 - 1990/5

N2 - One-sun AM1.5 efficiencies of 23.8% for 0.25-cm2-area GaAs solar cells fabricated from molecular beam epitaxy (MBE) material were obtained. The performance is comparable to that obtained with metalorganic chemical vapor deposited (MOCVD) material. One-sun AM1.5 efficiencies of 16.1% for 0.25-cm2-area Al0.22Ga0.78As solar cells fabricated from MBE material were also obtained. This efficiency is 3.2% higher than the previously best reported efficiency of 12.9% for an Al0.2Ga0.8As solar cell fabricated from MBE material.

AB - One-sun AM1.5 efficiencies of 23.8% for 0.25-cm2-area GaAs solar cells fabricated from molecular beam epitaxy (MBE) material were obtained. The performance is comparable to that obtained with metalorganic chemical vapor deposited (MOCVD) material. One-sun AM1.5 efficiencies of 16.1% for 0.25-cm2-area Al0.22Ga0.78As solar cells fabricated from MBE material were also obtained. This efficiency is 3.2% higher than the previously best reported efficiency of 12.9% for an Al0.2Ga0.8As solar cell fabricated from MBE material.

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M3 - Paper

AN - SCOPUS:0025420877

SP - 163

EP - 167

T2 - Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)

Y2 - 21 May 1990 through 25 May 1990

ER -

High-Efficiency GaAs and AlGaAs Solar Cells Grown by Molecular Beam Epitaxy

Abstract

Conference

Bibliographical note

NREL Publication Number

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