High Efficiency GaAs Solar Cells Using GaInP2 Window Layers

Sarah R. Kurtz; J. M. Olson; A. Kibbler

High Efficiency GaAs Solar Cells Using GaInP2 Window Layers

Sarah R. Kurtz, J. M. Olson, A. Kibbler

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

46 Scopus Citations

Abstract

GaAs single-junction solar cells using Ga_0.5In_0.5P and having 1 sun, an air mass (AM) of 1.5, and global efficiencies of 25.0-25.7% are reported. The open-circuit voltage (V_oc), short-circuit current (J_sc), and fill factor (ff) for the 25.7% efficient cell were 1.039 V, 28.5 mA/cm², and 86.8%, respectively. The devices were grown at 700°C using conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The antireflection coating is a double layer of MgF₂ and ZnS. V_oc's as high as 1.055 V were obtained for some of the devices. This high V_oc is attributed to the low interface recombination velocity of the Ga_0.5In_0.5PGaAs heterointerface. Factors that affect the efficiency of this device, including the thickness and composition of the Ga_0.5In_0.5P window layer, are presented and discussed.

Original language	American English
Pages	138-140
Number of pages	3
State	Published - May 1990
Event	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA Duration: 21 May 1990 → 25 May 1990

Conference

Conference	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)
City	Kissimimee, FL, USA
Period	21/05/90 → 25/05/90

NREL Publication Number

ACNR/CP-212-11725

Cite this

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title = "High Efficiency GaAs Solar Cells Using GaInP2 Window Layers",

abstract = "GaAs single-junction solar cells using Ga0.5In0.5P and having 1 sun, an air mass (AM) of 1.5, and global efficiencies of 25.0-25.7% are reported. The open-circuit voltage (Voc), short-circuit current (Jsc), and fill factor (ff) for the 25.7% efficient cell were 1.039 V, 28.5 mA/cm2, and 86.8%, respectively. The devices were grown at 700°C using conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The antireflection coating is a double layer of MgF2 and ZnS. Voc's as high as 1.055 V were obtained for some of the devices. This high Voc is attributed to the low interface recombination velocity of the Ga0.5In0.5PGaAs heterointerface. Factors that affect the efficiency of this device, including the thickness and composition of the Ga0.5In0.5P window layer, are presented and discussed.",

author = "Kurtz, {Sarah R.} and Olson, {J. M.} and A. Kibbler",

year = "1990",

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language = "American English",

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note = "Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) ; Conference date: 21-05-1990 Through 25-05-1990",

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TY - CONF

T1 - High Efficiency GaAs Solar Cells Using GaInP2 Window Layers

AU - Kurtz, Sarah R.

AU - Olson, J. M.

AU - Kibbler, A.

PY - 1990/5

Y1 - 1990/5

N2 - GaAs single-junction solar cells using Ga0.5In0.5P and having 1 sun, an air mass (AM) of 1.5, and global efficiencies of 25.0-25.7% are reported. The open-circuit voltage (Voc), short-circuit current (Jsc), and fill factor (ff) for the 25.7% efficient cell were 1.039 V, 28.5 mA/cm2, and 86.8%, respectively. The devices were grown at 700°C using conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The antireflection coating is a double layer of MgF2 and ZnS. Voc's as high as 1.055 V were obtained for some of the devices. This high Voc is attributed to the low interface recombination velocity of the Ga0.5In0.5PGaAs heterointerface. Factors that affect the efficiency of this device, including the thickness and composition of the Ga0.5In0.5P window layer, are presented and discussed.

AB - GaAs single-junction solar cells using Ga0.5In0.5P and having 1 sun, an air mass (AM) of 1.5, and global efficiencies of 25.0-25.7% are reported. The open-circuit voltage (Voc), short-circuit current (Jsc), and fill factor (ff) for the 25.7% efficient cell were 1.039 V, 28.5 mA/cm2, and 86.8%, respectively. The devices were grown at 700°C using conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The antireflection coating is a double layer of MgF2 and ZnS. Voc's as high as 1.055 V were obtained for some of the devices. This high Voc is attributed to the low interface recombination velocity of the Ga0.5In0.5PGaAs heterointerface. Factors that affect the efficiency of this device, including the thickness and composition of the Ga0.5In0.5P window layer, are presented and discussed.

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M3 - Paper

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T2 - Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)

Y2 - 21 May 1990 through 25 May 1990

ER -

High Efficiency GaAs Solar Cells Using GaInP2 Window Layers

Abstract

Conference

NREL Publication Number

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