Abstract
GaInP/GaAs tandem solar cells are proving to be a highly adaptable, high-efficiency photovoltaic technology. GaInP/GaAs tandem cells have now exceeded all confirmed two-terminal efficiencies for cells of any material combination at one-sun air-mass 1.5 global (AM1.5G) with an efficiency η = 29.5%, at 160-suns AM1.5 direct (AM1.5D) with η = 30.2%, at one-sun AMO with η = 25.7%, and at AMO with η = 19.6% after 1-MeV, 1015-cm-2 electron irradiation. These high efficiencies reduce the balance-of-system costs for a photovoltaic power system relative to a system using less efficient cells. This balance-of-system leverage has made this technology competitive in the near term for space and concentrator terrestrial applications even though the GaInP/GaAs cells are relatively expensive. A starting point for these high efficiencies is the high quality of the single-crystal epitaxial material. Recent advances are attributed to improvements in interface passivation layers and cell designs.
Original language | American English |
---|---|
Pages | 1671-1678 |
Number of pages | 8 |
DOIs | |
State | Published - 1994 |
Event | Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: 5 Dec 1994 → 9 Dec 1994 |
Conference
Conference | Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) |
---|---|
City | Waikoloa, HI, USA |
Period | 5/12/94 → 9/12/94 |
NREL Publication Number
- NREL/CP-451-7429