High-Efficiency GaInP/GaAs/InGaAs Triple-Junction Solar Cells Grown Inverted with a Metamorphic Bottom Junction

J. F. Geisz, Sarah Kurtz, M. W. Wanlass, J. S. Ward, A. Duda, D. J. Friedman, J. M. Olson, W. E. McMahon, T. E. Moriarty, J. T. Kiehl

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Abstract

The authors demonstrate a thin, Ge-free III-V semiconductor triple-junction solar cell device structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1 sun global spectrum, space spectrum, and concentrated direct spectrum at 81 suns, respectively. The device consists of 1.8 eV Ga0.5 In0.5 P, 1.4 eV GaAs, and 1.0 eV In0.3 Ga0.7 As p-n junctions grown monolithically in an inverted configuration on GaAs substrates by organometallic vapor phase epitaxy. The lattice-mismatched In0.3 Ga0.7 As junction was grown last on a graded Gax In1-x P buffer. The substrate was removed after the structure was mounted to a structural "handle." The current-matched, series-connected junctions produced a total open-circuit voltage over 2.95 V at 1 sun.

Original languageAmerican English
Article number023502
Number of pages3
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
StatePublished - 2007

NREL Publication Number

  • NREL/JA-520-41602

Keywords

  • dislocations
  • electric measurements
  • elemental semiconductors
  • epitaxy
  • germanium
  • III-V semiconductors
  • lattice constants
  • semiconductor growth
  • semiconductor junctions
  • solar cells

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