High-Efficiency GaInP/GaAs/InGaAs Triple-Junction Solar Cells Grown Inverted with a Metamorphic Bottom Junction

J. F. Geisz; Sarah Kurtz; M. W. Wanlass; J. S. Ward; A. Duda; D. J. Friedman; J. M. Olson; W. E. McMahon; T. E. Moriarty; J. T. Kiehl

doi:10.1063/1.2753729

High-Efficiency GaInP/GaAs/InGaAs Triple-Junction Solar Cells Grown Inverted with a Metamorphic Bottom Junction

J. F. Geisz, Sarah Kurtz, M. W. Wanlass, J. S. Ward, A. Duda, D. J. Friedman, J. M. Olson, W. E. McMahon, T. E. Moriarty, J. T. Kiehl

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

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Abstract

The authors demonstrate a thin, Ge-free III-V semiconductor triple-junction solar cell device structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1 sun global spectrum, space spectrum, and concentrated direct spectrum at 81 suns, respectively. The device consists of 1.8 eV Ga0.5 In0.5 P, 1.4 eV GaAs, and 1.0 eV In0.3 Ga0.7 As p-n junctions grown monolithically in an inverted configuration on GaAs substrates by organometallic vapor phase epitaxy. The lattice-mismatched In0.3 Ga0.7 As junction was grown last on a graded Gax In1-x P buffer. The substrate was removed after the structure was mounted to a structural "handle." The current-matched, series-connected junctions produced a total open-circuit voltage over 2.95 V at 1 sun.

Original language	American English
Article number	023502
Number of pages	3
Journal	Applied Physics Letters
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.2753729 https://doi.org/10.1063/1.2753729
State	Published - 2007

NREL Publication Number

NREL/JA-520-41602

Keywords

dislocations
electric measurements
elemental semiconductors
epitaxy
germanium
III-V semiconductors
lattice constants
semiconductor growth
semiconductor junctions
solar cells

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Geisz, J. F., Kurtz, S., Wanlass, M. W., Ward, J. S., Duda, A., Friedman, D. J., Olson, J. M., McMahon, W. E., Moriarty, T. E., & Kiehl, J. T. (2007). High-Efficiency GaInP/GaAs/InGaAs Triple-Junction Solar Cells Grown Inverted with a Metamorphic Bottom Junction. Applied Physics Letters, 91(2), Article 023502. https://doi.org/10.1063/1.2753729, https://doi.org/10.1063/1.2753729

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abstract = "The authors demonstrate a thin, Ge-free III-V semiconductor triple-junction solar cell device structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1 sun global spectrum, space spectrum, and concentrated direct spectrum at 81 suns, respectively. The device consists of 1.8 eV Ga0.5 In0.5 P, 1.4 eV GaAs, and 1.0 eV In0.3 Ga0.7 As p-n junctions grown monolithically in an inverted configuration on GaAs substrates by organometallic vapor phase epitaxy. The lattice-mismatched In0.3 Ga0.7 As junction was grown last on a graded Gax In1-x P buffer. The substrate was removed after the structure was mounted to a structural {"}handle.{"} The current-matched, series-connected junctions produced a total open-circuit voltage over 2.95 V at 1 sun.",

keywords = "dislocations, electric measurements, elemental semiconductors, epitaxy, germanium, III-V semiconductors, lattice constants, semiconductor growth, semiconductor junctions, solar cells",

author = "Geisz, {J. F.} and Sarah Kurtz and Wanlass, {M. W.} and Ward, {J. S.} and A. Duda and Friedman, {D. J.} and Olson, {J. M.} and McMahon, {W. E.} and Moriarty, {T. E.} and Kiehl, {J. T.}",

year = "2007",

doi = "10.1063/1.2753729",

language = "American English",

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AU - Geisz, J. F.

AU - Kurtz, Sarah

AU - Wanlass, M. W.

AU - Ward, J. S.

AU - Duda, A.

AU - Friedman, D. J.

AU - Olson, J. M.

AU - McMahon, W. E.

AU - Moriarty, T. E.

AU - Kiehl, J. T.

PY - 2007

Y1 - 2007

N2 - The authors demonstrate a thin, Ge-free III-V semiconductor triple-junction solar cell device structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1 sun global spectrum, space spectrum, and concentrated direct spectrum at 81 suns, respectively. The device consists of 1.8 eV Ga0.5 In0.5 P, 1.4 eV GaAs, and 1.0 eV In0.3 Ga0.7 As p-n junctions grown monolithically in an inverted configuration on GaAs substrates by organometallic vapor phase epitaxy. The lattice-mismatched In0.3 Ga0.7 As junction was grown last on a graded Gax In1-x P buffer. The substrate was removed after the structure was mounted to a structural "handle." The current-matched, series-connected junctions produced a total open-circuit voltage over 2.95 V at 1 sun.

AB - The authors demonstrate a thin, Ge-free III-V semiconductor triple-junction solar cell device structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1 sun global spectrum, space spectrum, and concentrated direct spectrum at 81 suns, respectively. The device consists of 1.8 eV Ga0.5 In0.5 P, 1.4 eV GaAs, and 1.0 eV In0.3 Ga0.7 As p-n junctions grown monolithically in an inverted configuration on GaAs substrates by organometallic vapor phase epitaxy. The lattice-mismatched In0.3 Ga0.7 As junction was grown last on a graded Gax In1-x P buffer. The substrate was removed after the structure was mounted to a structural "handle." The current-matched, series-connected junctions produced a total open-circuit voltage over 2.95 V at 1 sun.

KW - dislocations

KW - electric measurements

KW - elemental semiconductors

KW - epitaxy

KW - germanium

KW - III-V semiconductors

KW - lattice constants

KW - semiconductor growth

KW - semiconductor junctions

KW - solar cells

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DO - 10.1063/1.2753729

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VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023502

ER -

High-Efficiency GaInP/GaAs/InGaAs Triple-Junction Solar Cells Grown Inverted with a Metamorphic Bottom Junction

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Keywords

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