High-Flux Stress Testing of Encapsulants for Medium-Concentration CPV Applications

Michael Kempe

doi:10.2172/965121

High-Flux Stress Testing of Encapsulants for Medium-Concentration CPV Applications

Michael Kempe

Materials Science

Research output: NREL › Technical Report

Abstract

This study involved developing methods to expose transparent encapsulant materials to high (40 to 45 UV suns) optical fluxes of UV radiation to enable rapid evaluation of materials.

Original language	American English
Number of pages	11
DOIs	https://doi.org/10.2172/965121
State	Published - 2009

Bibliographical note

A similar version was presented at the 34th IEEE Photovoltaic Specialists Conference, 7-12 June 2009, in Philadelphia, Pennsylvania

NREL Publication Number

NREL/TP-520-46648

Keywords

concentrating photovoltaics (CPV)
high-flux stress testing
hydrocarbon-based encapsulants
low cost
medium concentration
PV
quantum efficiency (QE)
solar spectrum
ultraviolet radiation

Access to Document

10.2172/965121

https://www.nrel.gov/docs/fy09osti/46648.pdf

Cite this

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title = "High-Flux Stress Testing of Encapsulants for Medium-Concentration CPV Applications",

abstract = "This study involved developing methods to expose transparent encapsulant materials to high (40 to 45 UV suns) optical fluxes of UV radiation to enable rapid evaluation of materials.",

keywords = "concentrating photovoltaics (CPV), high-flux stress testing, hydrocarbon-based encapsulants, low cost, medium concentration, PV, quantum efficiency (QE), solar spectrum, ultraviolet radiation",

author = "Michael Kempe",

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KW - concentrating photovoltaics (CPV)

KW - high-flux stress testing

KW - hydrocarbon-based encapsulants

KW - low cost

KW - medium concentration

KW - PV

KW - quantum efficiency (QE)

KW - solar spectrum

KW - ultraviolet radiation

U2 - 10.2172/965121

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M3 - Technical Report

ER -

High-Flux Stress Testing of Encapsulants for Medium-Concentration CPV Applications

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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Cite this