High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells

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Initial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×10 6 cm -2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in V oc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV V oc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.

Original languageAmerican English
Number of pages6
StatePublished - 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: 9 Apr 201213 Apr 2012


Conference2012 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

NREL Publication Number

  • NREL/CP-5200-55100

Other Report Number

  • Paper No. MRSS12-1432-G05-03-II06-03


  • cell efficiency
  • device performance
  • solar cells


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